The 13th Research Institute of China Electronics Technology Group Corporation

Xuedong Gao

Zhihong Feng

Zezhao He

Cui Yu

Jingjing Wang

Chuangjie Zhou

Qingbin Liu

Jianchao Guo

Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors. Said method comprising: forming a conductive layer on the upper surface of a diamond layer; the diamond layer being a high-resistance layer; manufacturing an active region mesa on the diamond layer; manufacturing, on the conductive layer, a source electrode on a first region corresponding to a source electrode region, and manufacturing, on the conductive layer, a drain electrode on a second region corresponding to a drain electrode region; depositing, on the conductive layer, a photocatalyst dielectric layer on the upper surface of a third region corresponding to a source and gate region, and depositing, on the conductive layer, the photocatalyst dielectric layer on the upper surface of a fourth region corresponding to a gate and drain region; illuminating the photocatalyst dielectric layer; depositing, on the conductive layer, a gate dielectric layer on a fifth region corresponding to gate electrode region, manufacturing a gate electrode on the upper surface of the gate dielectric layer. The present invention can reduce the on-resistance of devices.

Method for preparing diamond-based field effect transistor, and corresponding field effect transistor

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Shijiazhuang, China

Xuedong Gao