Boe Technology Group Co., Ltd.

Beijing Boe Sensor Technology Co., Ltd.

Beijing Boe Optoelectronics Technology Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Xuecheng Hou

Jianxing Shang

Xiangmi Zhan

Chuncheng Che

Jinyu Li

Guan Zhang

Chia Chiang Lin

Zhenyu Wang

Kunjing Chung

Huinan Xia

Zhenwu Jiang

Jingjie Su

Zhi Ding

Xin Li

Pengcheng Tian

Xiaobin Shang

Jian Nan Guo

Shaoying Xu

Kai Lu

Cheng Li

Jian Ma

Bin Zhao

Fengchun Pang

Ang Xiao

Xianxue Duan

Xiaodong Li

Kui Gong

Shuai Xu

Yongsheng Zhang

Tao Wu

Tianzhen Liu

Zhihai Zhang

Ye Zhang

Dexi Kong

Haiyang Lu

Binbin Xu

Yifan Yang

Ziran Liu

Shenkang Wu

Haifeng Cui

Chuang Yong

A detection base plate and a flat-panel detector. The detection base plate comprises multiple detection pixel units arranged in an array. Each detection pixel unit comprises: a thin-film transistor, a sacrificial layer and a photoelectric conversion part that are disposed on a substrate, wherein the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the thin-film transistor comprises an active layer, a first electrode and a second electrode; at least part of an orthographic projection of the active layer on the substrate is located within an orthographic projection of the sacrificial layer on the substrate; and the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode. In the detection base plate, the sacrificial layers of the detection pixel units are mutually independent.

Detection base plate and flat-panel detector

There is provided a detection panel, including: a substrate, gate lines, signal detection lines and pixels, a thin film transistor and an optical sensor are arranged in each pixel, the thin film transistor has a gate coupled with the corresponding gate line, a first electrode coupled with the corresponding signal detection line, and a second electrode coupled with a third electrode of the optical sensor in the same pixel; the pixels include at least one detecting pixel and at least one marking pixel, a first bias voltage line and a second bias voltage line are arranged on a side of the optical sensor away from the substrate, a fourth electrode of the optical sensor in the detecting pixel is coupled with the corresponding first bias voltage line, and the second electrode of the thin film transistor in the marking pixel is coupled with the corresponding second bias voltage line.

Detection panel, method for manufacturing the same and flat panel detector

Provided are a detection substrate and a ray detector. The detection substrate includes: a base substrate; a plurality of detection pixels located on the base substrate, at least one detection pixel serves as a detection marking pixel. The detection marking pixel includes: a storage capacitor, a first electrode plate of the storage capacitor coupled to a bias voltage end; a discharge circuit configured to write a signal of the bias voltage end into a second electrode plate of the storage capacitor under the control of a first scanning signal end; and a reading circuit coupled to an external reading circuit, the reading circuit configured to write the voltage of the second electrode plate of the storage capacitor into the external reading circuit and write a reference signal of the external reading circuit into the second electrode plate of the storage capacitor under the control of a second scanning signal end.

Detection substrate and ray detector

A detection substrate and manufacturing method thereof, a flat panel detector and manufacturing method thereof. The detection substrate includes: a substrate including a detection region, a binding region, a controllable on-off region, and a cutting region; a plurality of detection units including transistors and photosensitive devices located in the detection region, a transistor includes a gate, a first electrode and a second electrode; a photosensitive device is connected to the first or second electrode; a plurality of conductive wires, one end is connected to the gate, and the other end is extended to the binding region; a conductive ring disposed in the cutting region; a plurality of detection wires, one end is connected to the conductive ring, the other end is connected to the conductive wires, the detection wires are passed through the controllable on-off region; the detection wires located in the controllable on-off region can have a disconnected state.

Detection substrate and manufacturing method thereof, flat panel detector and manufacturing method thereof

The present disclosure provides a detection substrate, including: a base substrate, detection pixel units arranged in an array on the base substrate, where each detection pixel unit includes: a thin film transistor and a photoelectric conversion part located on a side of the thin film transistor, and a bias voltage line is arranged on a side of the photoelectric conversion part. The thin film transistor includes: an active layer, a first electrode and a second electrode, and the active layer including a channel region. At least one dielectric layer is provided between the photoelectric conversion part and the bias voltage line, and is formed with a first via hole therein, and at least part of an orthographic projection of the channel region on the base substrate is located within an orthographic projection of the first via hole on the base substrate. A flat panel detector is further provided.

Detection substrate and flat panel detector

A detection element, a manufacturing method thereof and a flat panel detector are disclosed. The detection element includes: a base substrate; a first electrode on the base substrate; a photoelectric conversion layer; a transparent electrode and a second electrode electrically connected with the transparent electrode on a side of the photoelectric conversion layer away from the first electrode. An orthographic projection of the photoelectric conversion layer on the base substrate completely falls within an orthographic projection of the first electrode on the base substrate, in a plane parallel to the base substrate, the transparent electrode is located at a middle portion of the photoelectric conversion, an orthographic projection of the second electrode on the base substrate includes a ring surrounding an orthographic projection of the transparent electrode on the base substrate.

Detection element, manufacturing method thereof, flat panel detector

Disclosed are a flat panel detector and a manufacturing method thereof. The flat panel detector including: a first optical assembly, having a first side and a second side opposite to the first side in a thickness direction of the flat panel detector, and including: a first scintillator layer configured for converting at least part of rays into a first visible light; and a first light guide component stacked with the first scintillator layer and configured for guiding the first visible light; a first image sensor assembly stacked with the first optical assembly, configured for receiving the first visible light, and including: a first image sensor located at the first side of the first optical assembly; and a second image sensor located at the second side of the first optical assembly.

Flat panel detector and manufacturing method thereof

The embodiments of the present disclosure provide a detection substrate, a preparation method thereof and a flat panel detector. An orthographic projection of a first electrode on the base substrate is set to be at least partially overlapped with an orthographic projection of an active layer of a thin film transistor on the base substrate, a first protruding part is arranged on a side, close to a corresponding data line, of the first electrode, an orthographic projection of the first protruding part on the base substrate is located between the orthographic projection of the active layer on the base substrate and an orthographic projection of the data line on the base substrate.

Detection substrate, preparation method thereof and flat panel detector

A flat panel detector substrate includes a base substrate, a photoelectric conversion layer, a bias signal line, and a conductive structure. The photoelectric conversion layer is located on the base substrate. The photoelectric conversion layer has a first surface proximate to the base substrate and a second surface away from the base substrate. The bias signal line is located between the photoelectric conversion layer and the base substrate. The conductive structure is located on the base substrate. One end of the conductive structure is coupled to the second surface of the photoelectric conversion layer, another end of the conductive structure is coupled to the bias signal line, and a portion therebetween is located beside the photoelectric conversion layer.

Flat panel detector substrate and manufacturing method thereof, and flat panel detector

A flat panel detector and an imaging system are provided. The flat panel detector includes a plurality of pixel units which include photosensitive pixel units and alignment pixel units. Each photosensitive pixel unit includes a photoelectric sensor configured to convert an incident light into an electrical signal so that a photosensitive pixel unit in which the photoelectric sensor is located has a grayscale that changes according to a real-time change of the incident light. Each alignment pixel unit is configured to have a fixed grayscale, and the fixed grayscale does not change according to the real-time change of the incident light. The alignment pixel units includes first alignment pixel units and second alignment pixel units. Each first alignment pixel unit has a first fixed grayscale, each second alignment pixel unit has a second fixed grayscale different from the first fixed grayscale.

Flat panel detector and imaging system

The present disclosure discloses a detection substrate, a manufacturing method thereof and a flat panel detector. The detection substrate includes: a base substrate, as well as a plurality of transistors, an oxide layer, a plurality of read electrodes and a plurality of photoelectric conversion structures sequentially on the base substrate, wherein a first electrode of each of the transistors is electrically connected with each of the photoelectric conversion structures in a one-to-one correspondence mode via each of the read electrodes; a material of an active layer includes an oxide; each of the photoelectric conversion structures includes an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer; and the oxide layer at least covers channel regions of the transistors and is insulated from the read electrodes.

Detection substrate, manufacturing method thereof and flat panel detector

The present disclosure discloses a flat panel detector, a driving method thereof and a detection device. The flat panel detector includes: at least one stage of first demultiplexer, wherein signal output terminals of a first stage of first demultiplexer are connected with the scanning signal lines in one-to-one correspondence, signal output terminals of other stage of first demultiplexer serves as signal input terminals of the previous stage of first demultiplexer, the first demultiplexers are configured to provide signals of the signal input terminals to all the signal output terminals in time division, the signal input terminals and the signal output terminals included in the different stages of first demultiplexers differ from one another, and the quantity of the signal input terminals and the quantity of the signal output terminals are reduced stage by stage from the first stage of first demultiplexer to the last stage of first demultiplexer.

Flat panel detector, driving method thereof and detection device

The present invention provides an optical detection module, a method for manufacturing the same and an optical detection substrate. The optical detection module includes: a base substrate; a switch transistor on a side of the base substrate and including a gate electrode, an active layer, a first electrode and a second electrode; a photosensitive device for sensing light, on a side of the switch transistor away from the base substrate and including a power electrode, a photosensitive layer and an output electrode stacked in sequence, the output electrode being electrically connected to the first electrode of the switch transistor; a barrier on a side of the switch transistor away from the base substrate; and an insulation portion on the same layer as the output electrode and the barrier and connected between the output electrode and the barrier.

Optical detection module, method for manufacturing optical detection module, and optical detection substrate

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Beijing, China

Xuecheng Hou