Seagate Technology Incorporated

Xuebing Feng

Zheng Gao

Yuankai Zheng

Haiwen Xi

Xiaohua Lou

Wonjoon Jung

Kaizhong Gao

Shaoping Li

Sining Mao

Eric Shane Linville

Steven Paul Bozeman

A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Magnetic stack having assist layers

Magnetic stack having assist layer

A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.

Wire-assisted magnetic write device with low power consumption

A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.

Magnetic stack with laminated layer

A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.

Growing community of inventors

Chanhassen, MN, United States of America

Xuebing Feng