Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Xue Wang

Markus Broell

Petrus Sundgren

Laura Kreiner

Markus Bröll

Stefan Barthel

Anna Nirschl

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

Radiation-emitting semiconductor body and semiconductor chip

An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*10cm, and the p-contact layer is less than 100 nm thick.

Optoelectronic semiconductor chip based on a phosphide compound semiconductor material

A semiconductor chip () is described comprising a semiconductor layer sequence () based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence () contains a p-type semiconductor region () and an n-type semiconductor region (). The n-type semiconductor region () comprises a superlattice structure () for improving current spreading, wherein the superlattice structure () has a periodic array of semiconductor layers (). A period of the superlattice structure () has at least one undoped first semiconductor layer () and a doped second semiconductor layer (), wherein an electronic band gap Eof the doped second semiconductor layer () is larger than an electronic band gap Eof the undoped first semiconductor layer ().

Growing community of inventors

Wuppertal, Germany

Xue Wang