Huawei Technologies Co., Limited

Kuang-Chi Intelligent Photonic Technology Ltd.

Chinese Academy of Sciences

Huawei Digital Power Technologies Co., Ltd.

Robosen Robotics (Shenzhen) Co., Ltd

Xudong Wang

Ruopeng Liu

Junhao Chu

Tie Lin

Xiangjian Meng

Jianlu Wang

Weicheng Xu

Ning Yang

Yan Chen

Lei Shi

Xu Chen

Chi Zhang

Yu Zhang

Hong Shen

Kai Xin

Junchao Li

Cheng Yi Huang

Xinyu Yu

Wei Li

Xiang Yuan

Zhaohui Wang

Linyong Fan

Jianbo Zou

Bo Yu

Dianzheng Guan

Gang Lin

Xiaosen Chen

Yanjie Chen

Peihua Liu

Guangjian Wu

Aimin Tang

Changhui Wen

Hanxue Jiao

Yongxin Ma

A three-level neutral point clamped inverter includes four switch units. When an average value of an output current of the three-level neutral point clamped inverter is greater than a first current threshold or less than a second current threshold, only one of the four switch units is controlled to perform a high-frequency operation, to reduce power consumption caused by a high-frequency operation. The average value of the output current is an average value of the output current of the three-level neutral point clamped inverter in a switching cycle. The first current threshold is a positive number, and the second current threshold is a negative number. Power consumption caused by the high-frequency operation of the switch unit in the inverter may be reduced, and electric energy conversion efficiency of the inverter may be improved. A time period in which two switch units perform complementary operations at high frequency is very small.

Photovoltaic system, inverter, and control method

Watch

Disclosed are a mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector and a preparation method thereof. The structure of the detector from bottom to top comprises a substrate, a mercury cadmium telluride material, an insulating layer, a two-dimensional semiconductor black phosphorus, and metal electrodes. First, growing the mercury cadmium telluride material on the substrate, removing part of the mercury cadmium telluride by ultraviolet lithography and argon ion etching, filling with aluminum oxide as the insulating layer using an electron beam evaporation method, transferring the two-dimensional semiconductor material black phosphorus at the junction of mercury cadmium telluride and an insulating layer assisted by a polypropylene carbonate film, and preparing the metal source-drain electrodes by electron beam lithography technology combined with the lift-off process to form the mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector.

Mercury cadmium telluride-black phosphorous van der waals heterojunction infrared polarization detector and preparation method thereof

This application provides a multi-hop data transmission method and apparatus, where the method includes: A primary base station obtains route configuration information, where the route configuration information indicates a first data transmission path between a terminal device and a serving gateway, the first data transmission path includes at least two route base stations, and the at least two route base stations include a secondary base station for the terminal device; and the primary base station sends the route configuration information to the at least two route base stations.

Multi-hop data transmission method and apparatus

A transformable robot, including a car body, under which the robot is equipped with a right leg and a left leg side by side, and on the upper part of which a right arm is on the right side and a left arm is on the left side. A car head is set in front of the car body and a carriage is set on the back of the car body. A head of the robot is installed on the top of the car body, and the right leg, the left leg, the right arm and the left arm are rotatably installed on the car body.

Transformable robot

A ferroelectric domain regulated optical readout mode memory and a preparing method thereof. The memory has such a structure that a two-dimensional semiconductor and a ferroelectric film layer are sequentially arranged on a conductive substrate. The method for preparing the memory includes the steps of preparing the two-dimensional semiconductor on the conductive substrate, preparing a ferroelectric film, then writing a periodic positive-reverse domain structure into the ferroelectric film on the two-dimensional semiconductor by using a piezoresponse force microscopy technology, and regulating a photoluminescent intensity of the two-dimensional semiconductor WSby using a ferroelectric domain. A fluorescent picture taken by a fluorescent camera shows light and dark areas corresponding to polarization directions, the light and dark areas represent an on state ('1') and an off state ('0') of the memory respectively, and accordingly the purpose of storage is achieved.

Ferroelectric domain regulated optical readout mode memory and preparing method thereof

A device-to-device ('D2D') communication method includes sending first control signaling to first user equipment, sending second control signaling to second user equipment, and sending N pieces of third control signaling to N third user equipment. The method also includes receiving first channel quality feedback signaling fed back by the first user equipment, second channel quality feedback signaling fed back by the second user equipment, and receiving N pieces of third channel quality feedback signaling fed back by the N third user equipment. The method further includes detecting channel quality between the D2D user equipment and a base station, and determining a D2D communication mode based on the feedback signaling and the channel quality between the D2D user equipment and the base station. The method additionally includes determining a D2D communication mode, and determining target third user equipment paired with the D2D user equipment based on the determined D2D communication mode.

Device-to-device D2D communication method and related device

Smart watch and band

An ultra-broad spectrum detector integrated with functions of a two-dimensional semiconductor and a ferroelectric material, where the device includes a substrate, a two-dimensional semiconductor, a source electrode, a drain electrode, a ferroelectric material and a gate electrode; the two-dimensional semiconductor, the source electrode and the drain electrode are arranged on an upper surface of the substrate, and the source electrode and the drain electrode are respectively arranged at two ends of an upper surface of the two-dimensional semiconductor; two sides of the two-dimensional semiconductor are respectively connected with the lower-layer metal of the source electrode and the lower-layer metal of the drain electrode; the ferroelectric material is arranged on the upper surfaces of the two-dimensional semiconductor, the source electrode and the drain electrode; and the lower surface of the gate electrode is connected with the upper surface of the ferroelectric material.

Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material

The present application provides a photon-based CA authentication method, including: receiving, by a photon-based CA authentication terminal, an optical signal from a photon terminal, where the optical signal includes a user ID; verifying the user ID included in the optical signal; and providing, in response to successful user ID verification, a user certificate to a client to perform CA certificate authentication.

Photon-based CA authentication method and system

Growing community of inventors

Shenzhen, China

Xudong Wang