Lg Innotek Co., Ltd.

Argo Ai Gmbh

Princeton Lightwave, Inc.

Argo Al, LLC

Princeton Lightware, Inc.

Xudong Jiang

Mark Itzler

Brian Piccione

Krystyna Slomkowski

John Hostetler

Harold Y Hwang

Rafael Ben-Michael

Ketan Mukund Patel

Krys Slomkowski

John L Hostetler

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Geiger-mode focal plane array having increased tolerance to optical overstress

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes

Geiger-mode focal plane array with monolithically integrated resistors

A scalable fuse design for individual pixels of a focal plane array of photodiodes comprises a fuse disposed on the upper surface of each photodiode in the array, wherein the fuse is situated proximal to a side of each photodiode. The fuse of each photodiode is electrically coupled to the active region thereof via a first bus and is electrically coupled to an ROIC via a second bus.

Article comprising a photodiode-side integrated fuse for avalanche photodetector focal plane array pixels and method therefor

A negative feedback avalanche diode for detecting the receipt of a single photon is described. The photodetector comprises a load element having two load states, one characterized by high impedance and the other characterized by low impedance. The load state of the load element is controlled by a control signal generated within the negative feedback avalanche diode itself.

Two-state negative feedback avalanche diode having a control element for determining load state

A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.

Method for dopant diffusion

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Princeton, NJ, United States of America

Xudong Jiang