Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Xuan Huang

Jia Pan

Junjun Xing

Jiye Yang

Chong Chen

Tao Wang

Yi Lu

Peng Sun

Longjie Zhao

Xukun Zhang

Tongbo Zhang

Yiping Yao

An IGBT device and a method for manufacturing it, the device includes a super junction structure that has several N-type pillars and P-type pillars arranged alternately; a cell unit that is located in an N-type epitaxial layer, and the N-type epitaxial layer is located above the N-type substrate; each cell unit includes a trench gate, a P-type body region, and a source region; an N-type carrier injection layer, the N-type carrier injection layer is located in the N-type epitaxial layer, and the N-type carrier injection layer is spaced apart from the N-type substrate by the N-type epitaxial layer; the bottom of the P-type body region is located in the N-type carrier injection layer; and a collector region that is located at the bottom of the N-type substrate.

IGBT device and method of making the same

An IGBT device comprises a super-junction structure arranged in a drift region and formed by a plurality of N-type pillars and a plurality of P-type pillars which are alternately arrayed. Device cell structures of the IGBT device are formed in an N-type epitaxial layer at the tops of super-junction cells. Each device cell structure comprises a body region, a gate structure and an emitter region. N-type isolation layers having a doping concentration greater than that of the N-type epitaxial layer are formed between the bottom surfaces of the body regions and the top surfaces of the P-type pillars and are used for isolating the body regions from the P-type pillars. The super-junction structure and the N-type isolation layers can increase the current density of the device, decrease the on-state voltage drop of the device and reduce the turn-off loss of the device.

IGBT device

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Shanghai, China

Xuan Huang