United Microelectronics Corp.

Xu Yang Shen

Chun-Yuan Wu

Seng Wah Liau

Chin-Fu Lin

Bin-Siang Tsai

Yen-Chen Chen

Kuo-Chih Lai

Zhibiao Zhou

Chia-Fu Hsu

Ai-Sen Liu

Chun-Ling Lin

Yang-Ju Lu

Ko-Wei Lin

Jen-Po Huang

Qinggang Xing

Yuheng Liu

Qin Li

Kiet Houng Chow

Sin-Shien Lin

A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.

Method for fabricating a MIM capacitor

A bonded semiconductor structure includes a first substrate and a second substrate. The first substrate includes a first interconnection structure, a first dielectric layer, and a first silicon carbon nitride (SiCN) layer sequentially stacked thereon. And at least a first conductive pad is formed in the first dielectric layer and the first SiCN layer. The second substrate includes a second interconnection structure, a second dielectric layer, and a second SiCN layer sequentially stacked thereon. And at least a second conductive pad is formed in the second dielectric layer and the second SiCN layer. The first conductive pad physically contacts the second conductive pad, and the first SiCN layer physically contacts the second SiCN layer.

Bonded semiconductor structure and method for forming the same

A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an interconnect structure, and an oxide semiconductor structure. The substrate has a first region and a second region. The interconnect structure is disposed on the substrate, in the first region. The oxide semiconductor structure is disposed over a hydrogen blocking layer, in the second region of the substrate.

Semiconductor device and method of fabricating the same

An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.

Image sensor and process thereof

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Singapore, Singapore

Xu Yang Shen