Hrl Laboratories, LLC

Xu Chen

Rongming Chu

Karim S Boutros

David F Brown

Adam J Williams

Mary Y Chen

Zijian “Ray” Li

Zijian "Ray" Li

A semiconductor structure comprising a layer of a III-N material and at least a portion of said layer being covered by a passivation layer, wherein the passivation layer comprises a first layer of SiN formed on said at least a portion of said III-N material layer and a second layer of SiN formed on said first layer of SiN; the first SiN layer having a first thickness and generating tensile stress in the structure and the second SiN layer having a second thickness and generating compressive stress in the structure.

Method for manufacturing a semiconductor structure having a passivated III-nitride layer

A field-effect transistor (FET) includes a plurality of semiconductor layers, a source electrode and a drain electrode contacting one of the semiconductor layers, a first dielectric layer on a portion of a top semiconductor surface between the source and drain electrodes, a first trench extending through the first dielectric layer and having a bottom located on a top surface or within one of the semiconductor layers, a second dielectric layer lining the first trench and covering a portion of the first dielectric layer, a third dielectric layer over the semiconductor layers, the first dielectric layer, and the second dielectric layer, a second trench extending through the third dielectric layer and having a bottom located in the first trench on the second dielectric layer and extending over a portion of the second dielectric, and a gate electrode filling the second trench.

III-Nitride insulating-gate transistors with passivation

A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.

III-Nitride metal-insulator-semiconductor field-effect transistor

III-nitride metal insulator semiconductor field effect transistor

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Xu Chen