United Solar Systems Corporation

XiXiang Xu

Subhendu Guha

Chi C Yang

Arindam Banerjee

Substrate temperatures are maintained above 400.degree. C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400.degree. C. Maximum cell efficiency occurs for depositions carried out in the range of 400.degree.-500.degree. C.

Microwave energized deposition process with substrate temperature

High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

Microwave energized process for the preparation of high quality

The glow discharge deposition of thin film materials is most advantageously carried out at a pressure which is less than the pressure of the minimum point on the deposition system's Paschen curve and at a power which is in excess of the minimum power required to sustain a deposition plasma at the particular process pressure.

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XiXiang Xu