Hrl Laboratories, LLC

Xiwei Bai

Biqin Huang

Wei L Yi

Jack A Crowell

Elias A Flores

Stephen K Lam

Kenneth K Tsang

A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.

Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET

A vanadium dioxide (VO)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 10switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage Vspreading of less than about 25%. The threshold switch device may be included in an oscillator circuit to produce an astable oscillator that may serve as a functional building block in spiking-neuron based neuromorphic computing.

Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance

Growing community of inventors

Simi Valley, CA, United States of America

Xiwei Bai