Jingmen Gem Co., Ltd

Xiuping Du

Kaihua Xu

Tao Li

Zhenkang Jiang

Hua Zhang

Shifeng Jiang

Zhou Tang

Liang Bai

Zhijiang Wu

A preparation method for a high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling the addition amount of seed crystals. The method comprises the following steps: 1) feeding a ternary metal solution into a reaction kettle containing a first base liquid for reaction, and when the particle size reaches 1.5 to 3.0 μm, stopping the feeding, so as to obtain a seed crystal slurry; 2) simultaneously adding the ternary metal solution, a liquid alkali solution, and an ammonia solution in cocurrent flow into a growth kettle containing a second base solution for reaction, when the particle size reaches 6 to 8 μm, adding the seed crystal slurry into the reaction system, and controlling the particle size to be 9.0 to 11.0 μm by adjusting the feed rate of the seed crystal, so as to obtain the target object. In the preparation method, by adding seed crystals continuously, the crystal plane parameters of 001 peak in the prepared ternary precursor material is lower than the crystal plane parameters of 101 peak, facilitating the embedding of Li ions, and effectively improving the performance of a battery prepared by using the material.

Preparation method for high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling addition amount of seed crystals

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Hubei, China

Xiuping Du