University of Illinois

University of Texas System

Xiuling Li

Wen Huang

Jeong Dong Kim

Winston Chern

Placid M Ferreira

Jonathan V Sweedler

Paul W Bohn

Jae Cheol Shin

Munho Kim

Apratim Khandelwal

Zhendong Yang

Ik Su Chun

Matthew T Dejarld

J Gary Eden

David N Ruzic

Jean-Pierre Leburton

Olgica Milenkovic

Weidong Zhou

Dane J Sievers

Keng Hao Hsu

Daniel M Wasserman

Nicholas X Fang

Xin Yu

Ilesanmi Adesida

SeyedKasra Tabatabaei

Charles M Schroeder

Bo Li

Nagendra B Athreya

Lukas Janavicius

Edmond K C Chow

Randolph E Flauta

Jimmy Ni

Xiang Zhao

Zihao Ou

Paul J Froeter

Qian Chen

Lingyu Kong

Parsian Katal Mohseni

Moyang Li

Yi Song

Mark D Kraman

Seth A Fortuna

An electroplating method for enhancing the performance of rolled-up passive components comprises providing an array of rolled-up passive components on a substrate, where each rolled-up passive component comprises a multilayer strip in a rolled configuration including multiple turns spaced apart by gaps. The multilayer strip comprises a conductive pattern layer on a strain-relieved layer, and a core of each rolled-up passive component is defined by a first of the multiple turns. A layer comprising a functional material is electroplated onto the conductive pattern layer of each rolled-up passive component, thereby at least partly filling the gaps and/or the core with the functional material.

Electroplating method for enhancing the performance of rolled-up passive components

The present disclosure provides systems and methods that can provide portable, real-time accessible DNA memories. An example DNA-based data storage system includes a loading region configured to receive a plurality of DNA-based data storage elements in a suspension fluid and a plurality of microtubes disposed in a capture/release region. The microtubes are configured to capture and release the DNA-based data storage elements. The DNA-based data storage system also includes a linearization region configured to linearize the DNA-based data storage elements and a readout region with a readout device configured to provide information indicative of the respective DNA-based data storage elements.

On-chip nanoscale storage system using chimeric DNA

A rolled-up electromagnetic component for on-chip applications comprises: a multilayer sheet in a rolled configuration comprising at least one turn about a longitudinal axis; a core defined by a first turn of the rolled configuration; and a soft magnetic material disposed within the core, where the multilayer sheet comprises a conductive pattern layer on a strain-relieved layer. A method of making a rolled-up electromagnetic component for on-chip applications includes forming a rolled-up device comprising: a multilayer sheet in a rolled configuration having at least one turn about a longitudinal axis, where the multilayer sheet comprises a conductive pattern layer on a strain-relieved layer; and a core defined by a first turn of the rolled configuration. The method further includes introducing a soft magnetic material into the core.

Rolled-up electromagnetic component for on-chip applications and method of making a rolled-up electromagnetic component

Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

Metal assisted chemical etching to produce III-V semiconductor nanostructures

A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

Catalyst-assisted chemical etching with a vapor-phase etchant

An optoelectronic device with an antireflective surface comprises a semiconductor substrate having a textured surface including a plurality of surface protrusions and/or indentations. A first electrode is in contact with the semiconductor substrate and spaced apart from a second electrode that is also in contact with the semiconductor substrate. The textured surface is fabricated by inverse metal-assisted chemical etching, and thus the semiconductor substrate is substantially devoid of ion-induced defects.

Optoelectronic device having an antireflective surface

An array of rolled-up power inductors for on-chip applications comprises at least two rolled-up power inductors connected in series and formed from a stack of multilayer sheets. The array includes a first rolled-up power inductor comprising a first multilayer sheet in a rolled configuration about a first longitudinal axis and second rolled-up power inductor comprising a second multilayer sheet in a rolled configuration about a second longitudinal axis. The first and second rolled-up power inductors are laterally spaced apart. The first multilayer sheet comprises a first patterned conductive layer on a first strain-relieved layer, and the second multilayer sheet comprises a second patterned conductive layer on a second strain-relieved layer. Prior to roll-up of the second and first multilayer sheets, the second multilayer sheet is disposed on the first multilayer sheet, and a through-thickness first via connects the second patterned conductive layer with the first patterned conductive layer.

Rolled-up power inductor and array of rolled-up power inductors for on-chip applications

An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength &#x3bb;.

Optoelectronic device including a buried metal grating for extraordinary optical transmission (EOT)

A wireless communication device includes an array of helical antennas on a substrate. Each helical antenna comprises a strain-relieved sheet with a conductive strip thereon, where the strain-relieved sheet and the conductive strip are in a rolled configuration about a longitudinal axis. The conductive strip is oriented at an angle &#x3b1; with respect to a rolling direction so as to comprise a helical configuration about the longitudinal axis with a non-zero helix angle &#x3b2;. The array exhibits a maximum gain of at least about 10 dB at a working frequency of at least about 0.1 THz.

Helical antenna and method of modulating the performance of a wireless communications device

A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.

Self-anchored catalyst metal-assisted chemical etching

A tubular resonant filter comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis, where the multilayer sheet includes a strain-relieved layer, a patterned first conductive layer on the strain-relieved layer, an insulating layer on the patterned first conductive layer, and a patterned second conductive layer on the insulating layer and the patterned first conductive layer. The patterned first and second conductive layers and the insulating layer are interrelated to form a rolled-up inductor connected to a rolled-up capacitor on the strain-relieved layer.

Tubular resonant filter and method of making a tubular resonant filter

A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern layer on a surface thereof in an etchant solution. The magnetic pattern layer sinks into the structure as portions of the structure directly under the magnetic pattern layer are etched. A programmable magnetic field H(t) is applied to the structure during etching to guide the sinking of the magnetic pattern layer, thereby controlling the etching of the structure in three dimensions.

Apparatus and method for magnetic-field guided metal-assisted chemical etching

A rolled-up transformer structure comprises a multilayer sheet having a rolled configuration comprising multiple turns about a longitudinal axis. The multilayer sheet comprises more than one conductive pattern layer on a strain-relieved layer, including a first conductive film and a second conductive film separated from the first conductive film in a thickness direction. The first conductive film comprises an even number of primary conductive strips, where each primary conductive strip has a length extending in the rolling direction, and the second conductive film comprises an even number of secondary conductive strips, where each secondary conductive strip has a length extending in the rolling direction. In the rolled configuration, turns of the primary conductive strips and turns of the secondary conductive strips wrap around the longitudinal axis. The primary conductive strips serve as a primary winding and the secondary conductive strips serve as a secondary winding of the rolled-up transformer structure.

Rolled-up transformer structure for a radiofrequency integrated circuit (RFIC)

A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2&#x2266;n&#x2266;20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials.

Field effect transistor structure comprising a stack of vertically separated channel nanowires

Growing community of inventors

Champaign, IL, United States of America

Xiuling Li