Chinese Academy of Sciences

Xiujun Wang

Xiaoming Xie

Haomin Wang

Chao B Zhang

Li He

Tianru Wu

Guangyuan Lu

Hong Xie

Huishan Wang

Lingxiu Chen

Zhiyuan Shi

The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.

Method for preparing multi-layer hexagonal boron nitride film

A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.

Method for adjusting and controlling boundary of graphene

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Shanghai, China

Xiujun Wang