Asml Netherlands B.v.

Xiuhong Wei

Richard Johannes Franciscus Van Haren

Hubertus Johannes Gertrudus Simons

Irina Lyulina

Hadi Yagubizade

Remi Daniel Marie Edart

Everhardus Cornelis Mos

Michael Kubis

Stefan Cornelis Theodorus Van Der Sanden

Yichen Zhang

Marcus Adrianus Van De Kerkhof

Franciscus Godefridus Casper Bijnen

Jochem Sebastiaan Wildenberg

Roy Werkman

Daan Maurits Slotboom

Sami Musa

Sarathi Roy

Sanjaysingh Lalbahadoersing

David Deckers

Lydia Marianna Vergaij-Huizer

Nicole Schoumans

Bijoy Rajasekharan

Mohammad Reza Kamali

Pieter Gerardus Jacobus Smorenberg

Robertus Wilhelmus Van Der Heijden

Ronald Van Ittersum

Jeonghyun Park

Yingchao Cui

Reza Mahmoodi Baram

Sang Uk Kim

A method for determining lithographic matching performance includes obtaining first monitoring data from recurrent monitoring for stability control for an available EUV scanner. For a DUV scanner, second monitoring data is similarly obtained from recurrent monitoring for stability control. The EUV first monitoring data are in a first layout. The DUV second monitoring data are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing the first and/or second monitoring data into a common layout to allow comparison of the first and second monitoring data.

Determining lithographic matching performance

A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.

Method for controlling a manufacturing apparatus and associated apparatuses

A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.

Device manufacturing method

A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods

A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Alignment mark deformation estimating method, substrate position predicting method, alignment system and lithographic apparatus

The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.

Alignment method, alignment system, and product with alignment mark

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Eindhoven, Netherlands

Xiuhong Wei