Chinese Academy of Sciences

Semiconductor Manufacturing International (beijing) Corporation

Beijing Baidu Netcom Science Technology Co., Ltd

Germantech Co., Ltd.

Xiufeng Han

Guoqiang Yu

Peng Guo

Xiaoyu Sun

Caihua Wan

Yunan Han

Yaowen Xing

Chaohui Guo

Xiangqian Zhou

Hongxiang Wei

Lixian Jiang

Jiafeng Feng

Zilong Peng

Wenshan Zhan

Houfang Liu

Yang Zhang

Xuan Zhang

Min-Hwa Chi

Ming Ma

Tianyi Zhang

Pan Liu

Juntao Tong

Youhan Chen

Junjun Zhang

Yingjie Niu

Yun Zhao

Xiaoguang Zhang

Jiajing Fu

Ping Tang

Changjun Sheng

Xiaopei Hou

Zhengren Yan

Dan Ma

Wenya Liu

Yuke Zhang

Xiulong Xia

Qinli Ma

Chenyang Guo

Zhonghui Yuan

Wenqing He

Leina Jiang

Dianlin Zhang

Zhongming Zeng

Qihang Qin

Sufen Zhao

Weining Wang

Tian Yu

Jinhu Ai

Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.

Magnon junction, magnon random access memory, magnon microwave oscillator and detector, electronic device

Provided are a map data processing method and apparatus, and a storage medium, which relate to the field of data processing technology and, in particular, to artificial intelligence technology, for example, computer vision, map technology, and intelligent transportation. A specific implementation solution includes: processing landform coverage data according to a type of surface species coverage and a data processing rule associated with the type of surface species coverage to obtain a surface species coverage effect map; and generating a landform map according to the surface species coverage effect map and a reference map.

Map data processing method and apparatus, and storage medium

The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory

The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

Magnonic magneto-resistance device including two-dimensional spacer and electronic equipment comprising the same

The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.

Spin wave switch and filter based on magnonic crystal

The present invention relates to a spin logic device and an electronic equipment comprising the same. A spin logic device may include a Spin Hall effect (SHE) layer formed of a conductive material having Spin Hall effect and configured to receive a first logic input current and a second logic input current, the first logic input current and the second logic input current both being an in-plane current, a magnetic tunnel junction provided on the SHE layer comprising a free magnetic layer in contact with the SHE layer, a barrier layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the barrier layer, and a current wiring in connection to the reference magnetic layer side of the magnetic tunnel junction, the current wiring being in cooperation with the SHE layer to apply a read current passing through the magnetic tunnel junction therebetween.

Spin logic device and electronic equipment including same

The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.

Spin torque oscillator with high power output and its applications

A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

Nano-patterned system and magnetic-field applying device thereof

The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes&#x2014;sequentially from one end to the other end&#x2014;a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.

Magnetic nano-multilayers for magnetic sensors and manufacturing method thereof

A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.

A magnetic multilayer film for a temperature sensor is disclosed. The magnetic multilayer film comprises: a bottom magnetic composite layer provided on a substrate, the bottom magnetic composite layer having a direct pinning structure, an indirect pinning structure, a synthetic ferromagnetic structure, or a synthetic anti-ferromagnetic structure; a spacer layer provided on the bottom magnetic composite layer; and a top magnetic composite layer provided on the spacer layer, the top magnetic composite layer having the direct pinning structure, the indirect pinning structure, the synthetic ferromagnetic structure, or the synthetic anti-ferromagnetic structure, wherein a ferromagnetic layer of the bottom magnetic composite layer closest to the spacer layer has a magnetic moment anti-parallel with that of a ferromagnetic layer of the top magnetic composite layer closest to the spacer layer.

Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor

Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.

Magnetic tunnel junction device and its fabricating method

A magnetic logic element with toroidal magnetic multilayers (). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers () deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core () in the closed toroidal section. Said magnetic multilayers () unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (), the input signal lines A', B&#x2032;, C&#x2032; and an output signal line O&#x2032; are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same

Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same

The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

MRAM based on vertical current writing and its control method

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Beijing, China

Xiufeng Han