Rohm & Haas Electronic Materials LLC

Dupont Electronic Materials International, LLC

Xisen Hou

Irvinder Kaur

Cong Liu

Mingqi Li

Kevin Rowell

Cheng-Bai Xu

James F Cameron

James W Thackeray

Emad Aqad

Chunyi Wu

Joshua A Kaitz

Cheng Bai Xu

Tomas Marangoni

Colin Liu

ChoongBong Lee

Doris Kang

Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: Rindependently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Zis an organic anion; Aris substituted or unsubstituted Cheteroaryl group comprising a furan heterocycle; and Ris substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Arand Rare optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Aror substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through Ror substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Zas a pendant group to a polymer; and a solvent.

Photoresist compositions and pattern formation methods

A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R&#x2014;C(O)O&#x2014;R, wherein Ris a C3-C6 alkyl group and Ris a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Pattern formation methods and photoresist pattern overcoat compositions

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Arrepresents an aromatic group; Rindependently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent Rgroups together optionally form a fused ring structure with Ar; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar, and two or more of Rare independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

Photoresist pattern trimming compositions and pattern formation methods

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, &#x2014;O&#x2014;, or &#x2014;C(O)O&#x2014;; Rindependently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; Rrepresents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210&#xb0; C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Growing community of inventors

Lebanon, NH, United States of America

Xisen Hou