Microsoft Technology Licensing, LLC

Montage Technology Co., Ltd.

Hewlett Packard Enterprise Development LP

Shanghai Yamato Scale Co., Ltd

Xiong Zhang

Danny B Lange

Hung-Chih Yang

Graham Arthur Wheeler

Bhalchandra Pandit

Jason J Joyce

Chunlai Sun

David M Moore

Gang Shi

Kangchang Huang

Juan Du

Xiaoyang Fu

Chonghe Yang

Peichun Wang

Youjun Liao

Systems and methods are provided for a computing system for managing a mesh network deployment that includes a memory storing machine-executable instructions, and a processor configured to access the memory and execute the machine executable instructions to receive, link performance measurements from a plurality of access points in a mesh network, and determining a topology of the mesh network by: determining a first node competition index (NCI) for each interfering access point of the plurality of access points in the mesh network; comparing the NCI for each interfering access point to determine a maximum transmission time for each mesh link; and altering the network topology by assigning an active or backup mesh link to each access point based on the maximum transmission time for each mesh link.

Centralized solution to high-throughput topology optimization for wireless mesh networks

A traction mechanism for pipeline conveying apparatus comprises a flat belt and a plurality of trays fixedly arranged in the lengthwise direction at intervals on the flat belt. The pipeline conveying apparatus further comprises a pipeline, where the traction mechanism is arranged in the pipeline in a penetrating manner, and the pipeline conveying apparatus is further provided with a driving mechanism for driving the traction mechanism to move in the pipeline.

Traction mechanism for pipeline conveying apparatus and pipeline conveying apparatus comprising the same

Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.

Self-cooling semiconductor resistor and manufacturing method thereof

An electrostatic discharge and electrical overstress detection circuit includes protection circuit, sensing circuit, clamp circuit, several stages of sampling logic circuits connected in sequence and storage circuit. Protection circuit is coupled between input/output pin and internal chip and discharges to a power supply terminal when the electrostatic discharge or electrical overstress events happen. Sensing circuit and clamp circuit are coupled between power supply terminal and ground terminal. Each stage of sampling logic circuit is coupled to power supply terminal and memory cell of storage circuit, and the first stage of sampling logic is coupled to the clamp circuit, and when the electrostatic discharge or electrical overstress events happen, the several stages of sampling logic circuits sample voltage of the power supply terminal one by one and change state of corresponding memory cell, so that the electrostatic discharge or electrical overstress events are successively recorded by the memory cell.

Electrostatic discharge and electrical overstress detection circuit

On-chip peltier cooling devices and manufacturing methods thereof are provided. The device comprises: a first type well, a polysilicon gate and dummy gates, first type doped regions, a second type doped region, a first and second via. The dummy gate is formed as a two-segment structure with an interval, and there is no gate oxide layer between portions of the dummy gate which are far away from the interval and the semiconductor substrate. The first type doped region at least overlaps with an orthographic projection region of the first segment of the dummy gate on the semiconductor substrate. The second type doped region at least overlaps with orthographic projection regions of the polysilicon gate and the second segment of the dummy gate on the semiconductor substrate. In this application, the heat flows from inside of the device to its surface, to realize heat dissipation and cooling.

On-chip peltier cooling device and manufacturing method thereof

Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

Integrated cooling device based on Peltier effect and manufacturing method thereof

An asymmetrical I/O structure is provided. In one embodiment, the asymmetrical I/O structure comprises a first power supply node connected to a first voltage, a second power supply node connected to a second voltage, a pull-up unit and a pull-down unit which are connected between the first power supply node and the second power supply node. The first voltage is higher than the second voltage. A node between the pull-up unit and the pull-down unit is connected to an I/O node. The pull-up unit comprises one or more pull-up transistors, and the pull-down unit comprises one or more pull-down transistors. The number of the pull-up transistors is different from the number of the pull-down transistors.

Asymmetrical I/O structure

The present application disclosed a conducting layer-dielectric layer-conducting layer (CDC) laminate structure and test method for detecting defects of an inter-metal dielectric layer. The laminate structure comprises: a dielectric layer formed on a substrate; a first conducting layer formed at a first side of the dielectric layer, wherein the first conducting layer includes a first metal region and at least one first opening in the first metal region; and a second conducting layer formed at a second side of the dielectric layer opposite to the first conducting layer such that the second conducting layer is separated from the first conducting layer by the dielectric layer, wherein the second conducting layer includes a second metal region and a plurality of second openings in the second metal region. The at least one first opening and the plurality of second openings are configured that a projection of the second metal region on the first conducting layer at least partially overlaps with the first metal region.

Laminate structure and test method for detecting inter-metal dielectric layer defects

A system includes a processing device configured to execute instructions including accessing messages sent by a first user and other users. The instructions include identifying a first subset of messages that were sent by the first user and identifying a second subset of messages that are related to a first topic and were sent by the first user. The instructions include determining an authority value based on counts of the first and second subsets. The instructions include identifying a third subset of messages that resulted from the other users forwarding the second subset. The instructions include determining a power value based on a count of users that sent the third subset and computing an impact score for the first user on the first topic based on the authority and power values. The instructions include, based on the impact score, contacting the first user in relation to the first topic.

Computer system for automated assessment at scale of topic-specific social media impact

A system includes a memory storing a dataset representing a community of users of a social networking service, the social networking service providing a platform enabling a user within the community to communicate with at least one of a plurality of other users within the community. The system includes a processor coupled to the memory, the processor configured to determine a ranking of the service users in the dataset based on an initial influence score for at least one of the users. The processor is also configured to determine a contribution to a first user within the community by at least one second user of the plurality of other users within the community, and calculate an influence score for the first user. The ranking is revised based at least in part on the calculated influence score, and information is rendered to a target user based on the revised ranking.

Identifying influential users of a social networking service

A canopy clustering process merges at least one set of multiple single-center canopies together into a merged multi-center canopy. Multi-center canopies, as well as the single-center canopies, can then be used to partition data objects in a dataset. The multi-center canopies allow a canopy assignment condition constraint to be relaxed without risk of leaving any data objects in a dataset outside of all canopies. Approximate distance calculations can be used as similarity metrics to define and merge canopies and to assign data objects to canopies. In one implementation, a distance between a data object and a canopy is represented as the minimum of the distances between the data object and each center of a canopy (whether merged or unmerged), and the distance between two canopies is represented as the minimum of the distances for each pairing of the center(s) in one canopy and the center(s) in the other canopy.

Grouping documents and data objects via multi-center canopy clustering

This patent relates to a system for identifying influential users of a social network platform. The system may access records of messages sent or received by a plurality of users. The system can determine a power of a user to reach other users based at least in part on the messages. The system can determine an authority of the user on a topic. The system can also compute an impact score that reflects both the power and the authority of the user on the topic. Such scores may be used to select users based on impact as part of social trend analysis, marketing or other functions.

Social media impact assessment

A system for identifying influential users of a social network platform. The system may compute a score for each of multiple users. Such a score may be topic-based, leading to a more accurate identification of influential users. Such a topic-based score may indicate authority and/or impact of a user with respect to a topic. The impact may be computed based on authority combined with other factors, such as power of the user. The authority score may be simply computed, in whole or in part, directly from a tweet log without, for example creating a retweet graph. As a result, the scores may be computed, using MapReduce primitives or other constructs that allow the computations to be distributed across multiple parallel processors. Such scores may be used to select users based on impact as part of social trend analysis, marketing or other functions.

Technologies pertaining to computing a metric that is indicative of whether an n-gram in a large corpus of text is a collocation are described herein. The metric is computed in connection with a distributed computing framework, wherein n-grams of varying lengths can be analyzed in a single input data pass, and wherein secondary sorting functionality of the distributed computing framework need not be invoked.

Identifying collocations in a corpus of text in a distributed computing environment

Techniques for identifying influential users of a social networking service are provided. Influential users may be identified via an algorithm in which an influence score is assigned to each user based at least in part on other members of the community users having taken an affirmative step with respect to the user's communications. Iterative processing may be performed, with each user's influence score being determined by contributions from other users, and each contribution being determined by the contributor's influence score as of a prior iteration. A map-reduce framework may be employed, with data representing the community being partitioned into a plurality of discrete shards, a map process corresponding to each shard calculating an influence score for users represented in the shard, and reduce processes ranking users according to influence score across all shards.

Growing community of inventors

Shanghai, China

Xiong Zhang