Chinese Academy of Sciences

Xiong Li

Xiangang Luo

Mingbo Pu

Xiaoliang Ma

Ping Gao

Zeyu Zhao

Yinghui Guo

Yanqin Wang

Kaipeng Liu

Min Wang

Changtao Wang

Yunfei Luo

Chengwei Zhao

Leilei Yang

Mingfeng Xu

Di Sang

Guoqing Shen

Ling Liu

Jiayu He

Jiong Wang

Liqin Liu

Cheng Huang

Chenggang Hu

Na Yao

Cheng Haung

The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Ultra-large area scanning reactive ion etching machine and etching method thereof

A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Mask topology optimization method and system for surface plasmon near-field photolithography

Provided is a multifunctional lithography device, including: a vacuum substrate-carrying stage configured to place a substrate and adsorb the substrate on the vacuum substrate-carrying stage by controlling an airflow, so as to control a gap between the substrate and the mask plate; a mask frame arranged above the vacuum substrate-carrying stage and configured to fix the mask plate; a substrate-carrying stage motion system arranged below the vacuum substrate-carrying stage and configured to adjust a position of the vacuum substrate-carrying stage, so that a distance between the substrate and the mask plate satisfies a preset condition; an ultraviolet light source system arranged above the mask plate and configured to generate an ultraviolet light for lithography; and a three-axis alignment optical path system configured to align the ultraviolet light with the mask plate.

Multifunctional lithography device

The present disclosure provides a visible light-transparent and radiative-cooling multilayer film, including N layers of films which have different thicknesses and are arranged alternately. The visible light-transparent and radiative-cooling multilayer film adopts a new film layer arrangement, so that the multilayer film has an extremely high visible light transmittance while achieving radiative cooling. Among others, the multilayer film is composed of two materials having high visible light-transmittance. Since there is a difference between dielectric constants of the two materials, a resonant cavity or resonant cavities may be formed among material layers. The resonant cavity may enhance the electric field therein, thereby increasing the radiance of the structure greatly. The present disclosure has the advantages of simple structure, easy to process, good cooling effect, high visible light transmittance and low cost.

Visible light-transparent and radiative-cooling multilayer film

A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Method for etching curved substrate

Provided is an intelligent correction device control system for a super-resolution lithography precision mask, including: a sixteen-way pneumatic fine-tuning mask deformation control subsystem configured to deform a mask, detect a force value of a mask deformation, compare the force value of the mask deformation with an output force set value, and generate a first control feedback quantity to adjust a force deforming the mask, so as to control a deformation quantity of the mask; and an alignment subsystem configured to acquire images of the mask and a substrate, and adjust a position between the mask and the substrate according to the images, so as to align the mask with the substrate.

Intelligent correction device control system for super-resolution lithography precision mask

Provided is a method of fabricating a micro-nano structure, including: forming a reflective layer and a fluid polymer layer sequentially on a surface of a substrate; pressurizing the substrate and a mask having a micro-nano pattern to attach to each other, squeezing the fluid polymer layer into a light-transmission area of the mask, and curing the fluid polymer layer; and exposing, wherein a fluid polymer in the light-transmission area is configured to sense light under a combined effect of a transmitted light and a light reflected by the reflective layer, such that a micro-nano structure is obtained. The method solves the problem of limited diffraction, improves the processing resolution by reducing the transmission loss of evanescent waves through reflective light field enhancement, and reduces the difficulty and cost of mask processing and pattern defects by using shallow pressurizing in combination with exposure.

Method of fabricating micro-nano structure

The present disclosure provides a sub-wavelength structural material having compatibility of low detectability for infrared, laser, and microwave, which includes, from top to bottom, a metal type frequency selective surface layer I, a dielectric layer I, a metal type frequency selective surface layer II, a dielectric layer II, a resistive film, a dielectric layer III. Each of the metal type frequency selective surface layers is a sub-wavelength patch type array, and metal used by the metal type frequency selective surface layers has a characteristic of low infrared emissivity. The present disclosure modulates a phase by using a phase difference generated by patches with different sizes on the metal type frequency selective surface layer I, so as to control backscattering of incident electromagnetic waves to achieve compatibility of low detectability for laser and infrared, while the bottom three layers achieve absorption of microwave.

Sub-wavelength structural material having patch type array and compatibility of low detectability for infrared, laser, and microwave

The present disclosure proposes an apparatus for coating photoresist and a method for coating photoresist. The apparatus for coating photoresist comprises a gas supply unit () configured to supply gas to a photoresist application unit (); wherein the photoresist application unit () comprises: a device cavity () enclosed by sidewalls, a bottom plate and a cover plate (), a rotation platform () configured to carry a substrate () and bring the substrate to rotate; a guide unit conformal with the substrate, and configured to uniformly blow the gas supplied by the gas supply unit over a surface of the substrate on which the photoresist is coated; and a gas extraction unit () configured to extract gas from the device cavity (). The present disclosure realizes uniformly and rapidly coating the photoresist on a large substrate.

Methods and apparatuses for coating photoresist

Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.

Growing community of inventors

Sichuan, China

Xiong Li