Chinese Academy of Sciences

Shanghai Ic R&d Center Co., Ltd

Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd

Hangzhou Youyide Network Technology Co., Ltd.

Xinyu Li

Xinxin Li

Li Su

Pengcheng Xu

Fanglan Yao

A method for measuring activation energy of a catalyst is disclosed, which includes obtaining a resonant frequency change-time curve using an integrated self-heating resonant cantilever (), converting the resonant frequency change-time curve into a resonant frequency change-temperature curve, converting the resonant frequency change-temperature curve into a coverage-temperature curve, obtaining a coverage change rate-temperature curve by performing first-order differentiation on the coverage-temperature curve, obtaining relevant parameters corresponding to local minimum values from the coverage change rate-temperature curve, and substituting the relevant parameters into calculation formulas to obtain a desorption rate constant of the catalyst and a desorption activation energy of the catalyst. It can be seen that the present disclosure simply requires programmed heating in terms of operating on the samples, which is fast and convenient. In addition, the method also has other advantages, such as, accurate measurement results, low consumption of samples, and low price.

Method for measuring activation energy of catalyst

Hose splitter

The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfaces are also affected by uniform low pressure, which enhances force uniformity during bonding process, and reduces an impact of particles on the bonding surfaces in the closed space.

Bonding cavity structure and bonding method

Growing community of inventors

Shanghai, China

Xinyu Li