Lam Research Corporation

University System of Maryland

Xinyi Chen

Pramod Subramonium

Sirish K Reddy

Gary W Rubloff

Andrew H Breninger

Chunhai Ji

Sang Bok Lee

Israel Perez

Parag Banerjee

Laurent Lecordier

Tu Hong

Chanyuan Liu

Eleanor Gillette

An apparatus includes a lift pinto raise and lower a semiconductor substrate relative to a substrate support assembly in a processing chamber. The lift pin includes a top end having a conical shape tapering downwardly and a bottom end having a cylindrical shape. The apparatus comprises a lift pin holder to hold the bottom end of the lift pin.

Wafer lift pin mechanism for preventing local backside deposition

An apparatus, system, and method are provided for a vertical two-terminal nanotube or microtube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical device can include a column disposed in a template material extending from one side of the template material to the other side of the template material. Further, the device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed in the column. A variety of configurations, variations, and modifications are provided.

Nanodevice arrays for electrical energy storage, capture and management and method for their formation

Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

High selectivity and low stress carbon hardmask by pulsed low frequency RF power

Growing community of inventors

Tualatin, OR, United States of America

Xinyi Chen