Chinese Academy of Sciences

Tyco Electronics (shanghai) Co., Ltd.

Primenano, Inc.

Casco Signal Co., Ltd.

Xinxin Li

LiMing Wang

Tongbao Ding

Weiguo Li

Yongliang Yang

Liang Chen

Yuelin Wang

Songlin Feng

Ting Jiang

Xing Tong

Xinyu Li

Ruiyuan Ye

Li Su

Weijuan Li

Xiaonan Liu

Zenghua Fang

Fanglan Yao

Pengcheng Xu

Heng Yang

Zebin Tang

Man Xu

A method for measuring activation energy of a catalyst is disclosed, which includes obtaining a resonant frequency change-time curve using an integrated self-heating resonant cantilever (), converting the resonant frequency change-time curve into a resonant frequency change-temperature curve, converting the resonant frequency change-temperature curve into a coverage-temperature curve, obtaining a coverage change rate-temperature curve by performing first-order differentiation on the coverage-temperature curve, obtaining relevant parameters corresponding to local minimum values from the coverage change rate-temperature curve, and substituting the relevant parameters into calculation formulas to obtain a desorption rate constant of the catalyst and a desorption activation energy of the catalyst. It can be seen that the present disclosure simply requires programmed heating in terms of operating on the samples, which is fast and convenient. In addition, the method also has other advantages, such as, accurate measurement results, low consumption of samples, and low price.

Method for measuring activation energy of catalyst

The disclosure relates to a non-national standard turnout drive system based on a double 2-vote-2 architecture, including an interlocking processing subsystem IPS, an interlocking maintenance station SDM, a non-national standard turnout drive module HIOM and an interlocking maintenance station SDM, wherein the non-national standard turnout drive module HIOM, a full-electronic communication module EIOCOM2, and the interlocking processing subsystem IPS are connected with each other in order, and the full-electronic communication module EIOCOM2 is connected to the interlocking maintenance station SDM; two non-national standard turnout drive module HIOMs, which are mutually redundant, obtain turnout drive commands through the interlocking processing subsystem IPS to control drive relays in a non-national standard turnout to lift and fall for driving the turnout to rotate toward a specified direction, while collecting representation information of the turnout and determining a position of the turnout. Compared with the prior art, the disclosure has advantages of high reliability and strong maintainability.

Non-national standard turnout drive system based on double 2-vote-2 architecture

An electrical connector includes a main body portion having a receiving passage adapted to receive a plate-type plug inserted in an insertion direction, and a locking protrusion formed on the main body portion and protruding toward the receiving passage. The locking protrusion has a connection portion adapted to connect a top portion of the locking protrusion with the main body portion downstream in the insertion direction.

Electrical connector

A receptacle terminal includes a base portion having a plate shape extending in a transverse direction and a longitudinal direction and a plurality of pairs of elastic arms arranged in sequence and spaced apart from each other in the longitudinal direction. Each of the elastic arms has a contact portion contacting a plug terminal inserted into the receptacle terminal. A distance from the contact portions of a middle pair of elastic arms to the base portion is less than a distance from the contact portions of another two pairs of elastic arms to the base portion.

Receptacle terminal

A microwave probe having a metal tip on the free end of a microcantilever. In one embodiment, a pyramidal pit is isotropically etched in a device wafer of monocrystalline silicon. Oxidation may sharpen the pit. Deposited metal forms the metal tip in the pit and a bottom shield. Other metal sandwiched between equally thick dielectric layers contact the tip and form a conduction path along the cantilever for the probe and detected signals. Further metal forms a top shield overlying the conduction path and the dielectrically isolated tip and having equal thickness to the bottom shield, thus producing together with the symmetric dielectric layers a balanced structure with reduced thermal bending. The device wafer is bonded to a handle wafer. The handle is formed and remaining silicon of the device wafer is removed to release the cantilever.

Microcantilever microwave probe

Fabrication of a microcantilever microwave probe

A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped regions are formed in the upper surface of an n-type substrate. A trench is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements and electrode elements for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements on the trench side-walls and the previously P-type doped portions on the wafer surface. The trench intersects with insulating elements, so that insulating elements mutually insulate adjacent electrical elements. P-n junctions between the electrical elements and the substrate insulate the electrical elements from the substrate.

MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the same

Growing community of inventors

Shanghai, China

Xinxin Li