Csmc Technologies Fab1 Co., Ltd.

Csmc Technologies Fab2 Co., Ltd.

Xinwei Zhang

Changfeng Xia

Guoping Zhou

Wei Su

Dan Dai

Jiale Su

Meihan Guo

Chengjian Fan

A preparation method for a micro-electromechanical systems (MEMS) microphone includes the steps of: providing a silicon substrate having a silicon surface; forming an enclosed cavity in the silicon substrate; forming a plurality of spaced apart acoustic holes in the silicon substrate, each acoustic hole having two openings, one of which communicating with the cavity and the other one located on the silicon surface; forming a sacrificial layer on the silicon substrate, which includes a first filling portion, a second filling portion and a shielding portion; forming a polysilicon layer on the shielding portion; forming a recess in the silicon substrate on the side away from the silicon surface; and removing the first filling portion, the second filling portion and part of the shielding portion so that the recess is brought into communication with the cavity to form a back chamber, and that the polysilicon layer, the remainder of the shielding portion and the silicon substrate together delimit a hollow chamber, the hollow chamber communicating with the opening of the plurality of acoustic holes away from the cavity, completing the MEMS microphone.

MEMS microphone and preparation method therefor

A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiOon the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.

Manufacturing method of MEMS chip

A parallel plate capacitor includes a first polar plate (), and a second polar plate disposed opposite to the first polar plate (). The parallel plate capacitor further includes at least a pair of sensitive units disposed on a substrate forming the first polar plate (); the sensitive units includes sensitive elements () and element connecting arms () connecting the sensitive elements () to the first polar plate (). The parallel plate capacitor further includes anchoring bases () disposed on a substrate where the second polar plate is located; the anchoring bases () are connected to the element connecting arms () via cantilever beams (); each element connecting arm () is connected to at least two anchoring bases (), which are symmetric with respect to the element connecting arm. The parallel plate capacitor is more likely to be influenced by an external factor, thus being more likely to experience capacitance change. An acceleration sensor including the parallel plate capacitor is also provided.

Parallel plate capacitor and acceleration sensor comprising same

A MEMS chip () includes a silicon substrate layer (), a first oxidation layer () and a first thin film layer (). The silicon substrate layer includes a front surface () for a MEMS process and a rear surface (), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

MEMS chip and manufacturing method therefor

A monitoring structure and a relevant monitoring method for the silicon wet etching depth are provided. The structure includes a wet etched groove formed on a monocrystalline silicon material with at least two top surfaces thereof being rectangular; and the top surface widths of the grooves are Wand Wrespectively, W=d/0.71, and W=d/0.71, where dis the maximum wet etching depth to be monitored, and dis the minimum of the wet etching depth to be monitored. The method includes: performing anisotropic wet etching on a monocrystalline silicon wafer according to a pattern with a monitoring pattern, forming an etched groove to be monitored and a structure for monitoring the depth of the groove, and then monitoring the structure to monitor the wet etching depth. The etching depth of the groove can be monitored with low costs, and a higher monitoring accuracy is obtained.

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Jiangsu, China

Xinwei Zhang