Ebara Corporation

Xinming Wang

Akira Fukunaga

Daisuke Takagi

Akihiko Tashiro

Yukio Fukunaga

Hiroaki Inoue

Moriji Matsumoto

Makoto Kanayama

Norio Kimura

Koji Mishima

Akihisa Hongo

Kenichi Abe

Akira Owatari

Mitsuru Miyazaki

Fumitoshi Oikawa

Yukiko Nishioka

Teruaki Hombo

Kunimasa Matsushita

Haruko Ono

Tsuyoshi Sahoda

A substrate processing method includes jetting at least one fluid from a fluid nozzle toward a rotating substrate surface while moving the fluid nozzle from a center toward a periphery of the rotating substrate. The fluid nozzle is moved from the center of the substrate to a predetermined point at a constant initial movement speed. The fluid nozzle is subsequently moved from the predetermined point at a movement speed V(r) which satisfies the following relational expression: V(r)&#xd7;r=C (constant), where V(r) represents the movement speed of the fluid nozzle when it passes a position corresponding to a position on the substrate surface at a distance 'r' from the center of the substrate, and &#x3b1; represents a power index.

Substrate processing method and substrate processing unit

A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Method and apparatus for cleaning substrate

A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

Method and apparatus for forming metal film

There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.

Substrate processing method

The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.

Interconnects forming method and interconnects forming apparatus

The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective layer for protecting the surface of embedded interconnects, a semiconductor device manufactured by using the plating solution and a method for manufacturing the semiconductor device. The plating solution contains copper ions, metal ions of a metal, and the metal is capable of forming with copper a copper alloy in which the metal does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.

Plating solution, semiconductor device and method for manufacturing the same

There is provided a plating apparatus and method which can control the temperature of a plating solution during plating more uniformly and easily form a uniform plated film on the to-be-plated surface of a workpiece, and which can simplify the device and decrease the footprint. The plating apparatus includes a plating bath having a double bath structure including an inner bath for holding a plating solution and carrying out plating, and an outer bath which surrounds the inner bath and is in fluid communication therewith. A heating device is disposed in the outer bath. The plating apparatus may further include means for circulating or stirring the plating solution in the plating bath.

Plating apparatus and plating method

There is provided a plating apparatus which can keep a plating solution always in its optimal condition while minimizing the amount of plating solution used, and which can easily form a uniform plated film on the plating surface of a workpiece. The plating apparatus includes: a plating solution supply system () for constantly circulating a plating solution while heating the plating solution in a circulation tank () provided with a heating apparatus (), and supplying a predetermined amount of plating solution to a plating treatment section () when carrying out plating treatment; a plating solution recovery system () for recovering the plating solution after the plating treatment in the plating treatment section (), heating the plating solution and returning the heated plating solution to the circulation tank (); and a plating solution replenishment system () for replenishing the circulation tank () with a fresh plating solution or a plating solution component.

Plating apparatus

A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

Method for processing substrate

The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

Semiconductor device, method for manufacturing the same, and plating solution

A substrate processing apparatus has a substrate holder for detachably holding a substrate so that a surface, to be processed, of the substrate faces downward, and a sealing ring for sealing a peripheral portion of the surface, to be processed, of the substrate held by the substrate holder. The substrate processing apparatus also has a plurality of ejection nozzles disposed below the substrate holder for ejecting a treatment solution toward the surface, to be processed, of the substrate held by the substrate holder, and a mechanism for rotating and vertically moving the substrate holder and the ejection nozzles relative to each other.

Substrate processing apparatus and method

A substrate processing apparatus and method which employs the so-called batch processing method of processing a plurality of substrates simultaneously, thereby increasing the throughput, and which can carry out processing, such as electroless plating, stably and securely with a relatively simple apparatus. The substrate processing apparatus includes: a processing bath () for holding a processing liquid (); and a substrate holder () which is vertically movable relative to the processing bath () and which includes a plurality of substrate holding portions () for holding a plurality of substrates (W) in parallel. Each substrate holding portion () has a substrate stage () and a substrate presser (), which can move close to or away from each other and can grip therebetween a peripheral portion of a substrate to thereby hold the substrate with its back surface sealed, and has a heating medium flow passage () for passing a heating medium therethrough so as to regulate the temperature of the substrate holding portion ().

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Tokyo, Japan

Xinming Wang