Xiamen Changelight Co., Ltd.

Xinmao Huang

Zhiwei Lin

Kaixuan Chen

Junxian Li

Yingce Liu

Zhendong Wei

Wei Jiang

Xiangjing Zhuo

Xingen Wu

Tianzu Fang

Yang Wang

Qilong Wu

Yong Zhang

Hongyi Zhou

Bin Song

Liang Chen

Lihe Cai

Yongtong Li

Qimeng Lv

Qimeng Lyu

Gengcheng Li

Hexun Cai

Xiaoping Li

A light-emitting diode (LED) chip () comprises a substrate (), an epitaxial structure (), a transparent conductive layer (), a passivation protective layer (), and at least one electrode (). The epitaxial structure () is disposed on the substrate (). The transparent conductive layer () is disposed on the epitaxial structure (). The transparent conductive layer () defines one or more first through holes () that extend through the transparent conductive layer (). The passivation protective layer () is disposed on the transparent conductive layer (). The passivation protective layer () defines one or more second through holes () that extend through the passivation protective layer (). The electrode () is disposed on the passivation protective layer (). The electrode () electrically connects the transparent conductive layer () through the one or more second through holes ().

Light-emitting diode chip and method of manufacturing the same

According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.

Light-emitting diode chips with enhanced brightness

Growing community of inventors

Xiamen, China

Xinmao Huang