Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Intermolecular, Inc.

University of Texas System

Tokyo Electron Limited

Xinjian Lei

Manchao Xiao

Daniel P Spence

Haripin Chandra

Mark Leonard O'Neill

Matthew R MacDonald

Moo-Sung Kim

Raymond Nicholas Vrtis

Meiliang Wang

Robert Gordon Ridgeway

Jianheng Li

Bing Han

Ronald Martin Pearlstein

Richard Ho

Anupama Mallikarjunan

Sergei Vladimirovich Ivanov

John Anthony Thomas Norman

Heather Regina Bowen

Steven Gerard Mayorga

Hansong Cheng

William Robert Entley

Iain Buchanan

Madhukar Bhaskara Rao

Liu Yang

Eugene Joseph Karwacki, Jr

Wade Hampton Bailey, Iii

Laura M Matz

Hareesh Thridandam

Jennifer Lynn Anne Achtyl

John Francis Lehmann

Thomas R Gaffney

Charles Michael Birtcher

Thomas Andrew Steidl

Andrew David Johnson

Kirk Scott Cuthill

Sunil Shanker

Xiangxin Rui

Alan Charles Cooper

Kazuhide Hasebe

David A Roberts

Ron Rulkens

Cheol Seong Hwang

Masato Yonezawa

Xuezhong Jiang

Suresh Kalpatu Rajaraman

Agnes Derecskei-Kovacs

Se-Won Lee

Melanie K Perez

Ming Li

Masanobu Matsunaga

Dino Sinatore

Michael Ulman

Lee Arthur Senecal

Neil Osterwalder

Jinping Wu

Yves Jean Chabal

Chenggang Zhou

Michael T Savo

Sang-Hyun Yang

Matthew R Macdonald

Luis Fabián Peña

Aaron Michael Dangerfield

Chandra Haripin

Guocan Li

Tingmin Wang

Liam Quinn

Bo Han

Liam J Quinn

Taehong Gwon

Hongbo Li

Eugene Joseph Karwacki

Eugene Jospeh Karwacki, Jr

Xiao Manchao

Kim Moo-Sung

Tae Hong Gwon

Iain Buchanana

Iii Wade Hampton Bailey

Hareesh Thtidandam

Jr Eugene Joseph Karwacki

Luis Fabián PEÑA

Steve Gerard Mayorga

Mark Leonard O'neill

Thomas Richard Gaffney

Moo-sung Kim

An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500° C. is performed using at least one organoaminodisilazane precursor having the following Formula I: wherein Rand Rare each independently selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group with a proviso that Rand Rcannot be both hydrogen; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group; and either Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure.

Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.

Compositions and methods using same for deposition of silicon-containing film

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

Silicon compounds and methods for depositing films using same

An atomic layer deposition method for depositing a non-conformal silicon and oxygen containing film into surface features comprising vias and/or trenches on one or more substrates.

Compositions and methods using same for non-conformal deposition of silicon containing films

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si—H bond.

Atomic layer deposition (ALD) process formation of silicon oxide with temperature >600° C. is disclosed. Silicon precursors used have a formula of: I.RRSi(NRR)wherein R, R, and Rare each independently selected from a linear or branched Cto Calkyl group, and a Cto Caryl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group, a Cto Calkylsilyl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; m is 0 to 2; n is 1 to 3; and m+n=3.

Composition for high temperature atomic layer deposition of high quality silicon oxide thin films

Described herein are Group V and VI compounds used as precursors for depositing Group V and VI-containing films. Ligands with alkyl, amide, imide, amidinate groups and/or cyclopentadienyl (Cp) ligands are used to form Group V and VI complexes used as precursors. Examples of Group V and VI precursor compounds include, but are not limited to, Cp amide imide alkyl vanadium compounds, Cp amide imide alkylamide vanadium compounds, Cp amide imide alkoxide vanadium compounds, Cp amide imide amidinate vanadium compounds, and alkylimide vanadium trichloride compounds. The Group V and VI precursors are used for deposition on substrate surfaces with superior film properties such as uniformity, continuity, and low resistance. Examples of substrate surfaces for deposition of metal-containing films include, but are not limited to metals, metal oxides, and metal nitrides.

Group V and VI transition metal precursors for thin film deposition

A composition is used in a process for depositing a silicon oxide film or a carbon doped silicon oxide film using a deposition process, wherein the composition includes at least one silicon precursor having a structure represented by Formula I as described herein

Compositions and methods using same for thermal deposition silicon-containing films

The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and/UV curing.

Siloxane compositions and methods for using the compositions to deposit silicon containing films

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

High temperature atomic layer deposition of silicon-containing film

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.

Compositions comprising silacycloalkanes and methods using same for deposition of silicon-containing film

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilane precursors and methods for depositing films comprising same

Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

Methods for depositing a conformal metal or metalloid silicon nitride film

Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.

Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films

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Xinjian Lei