Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International Corp.

Semiconductor Manufacturing International (beijing) Corporation

XiNing Wang

Ling Liu

JenHao Cheng

Jin Feng Gao

Disclosed is a balanced to unbalanced converter, which relates to the field of semiconductor technologies. The balanced to unbalanced converter includes a first spiral coil and a second spiral coil. The first spiral coil includes: multiple rings of first metal wires; and a second metal wire, which is located above the multiple rings of first metal wires and is connected to an innermost ring of the first metal wires using a conductive plug. The second spiral coil includes: multiple rings of third metal wires, adjacent third metal wires being separated by one ring of the first metal wires; and multiple rings of fourth metal wires that are located above the multiple rings of the third metal wires, each ring of the fourth metal wires being connected to one ring of the third metal wires by the conductive plug, a fourth metal wire closer to an outer ring being connected to a third metal wire closer to an outer ring, and a fourth metal wire closer to an inner ring being connected to a third metal wire closer to an inner ring. The second metal wire and the innermost ring of the first metal wires do not overlap in a vertical direction, and at least one of the multiple rings of the fourth metal wires and the third metal wire connected to the fourth metal wire do not overlap in the vertical direction.

Balanced to unbalanced converter

Semiconductor devices having a ground shield structure and methods for their formation are provided herein. An exemplary semiconductor device can include a substrate, a ground ring, a ground shield, an electronic device, and/or an insulation layer. The ground ring can be disposed over the substrate. The ground shield can be disposed over the substrate and surrounded by the ground ring. The ground shield can include a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction. The metal wire can be connected to the ground ring. The electronic device can be disposed over the ground shield. The insulation layer can be disposed between the ground shield and the electronic device.

Semiconductor device having ground shield structure and fabrication method thereof

Various embodiments provide inductor devices and fabrication methods. An exemplary inductor device can include a plurality of planar spiral wirings isolated by a dielectric layer. The planar spiral wirings can be connected by conductive pads formed over the dielectric layer and by conductive plugs formed in the dielectric layer. In one embodiment, a third planar spiral wiring can be formed over a second planar spiral wirings that is formed over a first planar spiral wiring. The third planar spiral wiring can be configured in parallel with the first third planar spiral wiring. The second planar spiral wiring can be configured in series with the first and third planar spiral wirings configured in parallel.

Method for fabricating inductor device

A patterned ground shield structure is provided. The patterned ground shield structure includes a substrate having a dielectric layer. The patterned ground shield structure also includes a plurality of conductive rings having a plurality of sub conductive rings in the dielectric layer. Further, the patterned ground shield structure includes an interconnection line connecting with all of the sub conductive rings in the dielectric layer. Further, the patterned ground shield structure also includes a ground ring connecting with the interconnection line.

Patterned ground shield structures and semiconductor devices

Various embodiments provide ground shield structures, semiconductor devices, and methods for forming the same. An exemplary structure can include a substrate and a dielectric layer disposed on the substrate. The structure can further include multiple conductive rings disposed in the substrate, in the dielectric layer, and/or on the dielectric layer. Each conductive ring of the multiple conductive rings can have openings of about three or more, and the openings of the each conductive ring can divide the multiple conductive rings into a plurality of sub-conductive rings arranged spaced apart. The structure can further a ground ring electrically connected to each of the plurality of sub-conductive rings.

Ground shield structure and semiconductor device

Inductor device and fabrication method

Various embodiments provide inductor devices and fabrication methods. In one embodiment, an inductor device can include a first dielectric layer disposed on a semiconductor substrate; a first planar spiral wiring disposed on the first dielectric layer, and optionally one or more second planar spiral wirings disposed over the first planar spiral wiring. Each of the first and the optional second planar spiral wirings can include a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring. The second spiral metal wiring can include at least two sub-metal-lines isolated with one another.

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Shanghai, China

XiNing Wang