Globalfoundries Inc.

Xingzhao Shi

Haigou Huang

Tai Fong Chao

John H Zhang

Laertis Economikos

Jinping Liu

Jiehui Shu

Chih-Chiang Chang

Qiang Fang

Haifeng Sheng

Stan Tsai

Dinesh R Koli

Yuan Zhou

Methods of forming a SAC cap with SiN U-shaped and oxide T-shaped structures and the resulting devices are provided. Embodiments include forming a substrate with a trench and a plurality of gate structures; forming a nitride liner over portions of the substrate and along sidewalls of each gate structure; forming an ILD between each gate structure and in the trench; recessing each gate structure between the ILD; forming a U-shaped nitride liner over each recessed gate structure; forming an a-Si layer over the nitride liner and the U-shaped nitride liner; removing portions of the nitride liner, the U-shaped nitride liner and the a-Si layer; forming a W layer over portions of the substrate adjacent to and between the a-Si layer; forming an oxide liner over the nitride liner, the U-shaped nitride liner and along sidewalls of the W layer; and forming an oxide layer over portions of the oxide liner.

Advanced structure for self-aligned contact and method for producing the same

The disclosure is directed to methods of planarizing an integrated circuit structure including: forming a dielectric over a first nitride layer; planarizing the dielectric to a top surface of a set of nitride fins in a first region and removing the dielectric from a second region to expose the substantially planar upper surface in a second region; forming a second nitride layer over the dielectric and the top surface of the set of nitride fins and over the substantially planar upper surface; planarizing the second nitride layer such that the second nitride layer in the second region is planar with the top surface of the dielectric and the set of nitride fins, and such that the second nitride layer is removed from the first region; and performing an etch such that the first nitride layer in the first region is planar with the first nitride layer in the second region.

Methods for nitride planarization using dielectric

A process for forming a conductive structure includes the formation of a self-aligned, inlaid conductive cap over a cobalt-based contact. The inlaid conductive cap is formed using a damascene process by depositing a conductive layer comprising tungsten or copper over a recessed cobalt-based contact, followed by a CMP step to remove excess portions of the conductive layer. The conductive cap can cooperate with a liner/barrier layer to form an effective barrier to cobalt migration and oxidation.

Structure and method for inhibiting cobalt diffusion

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Clifton Park, NY, United States of America

Xingzhao Shi