Shenzhen China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Xingyu Zhou

Yuanjun Hsu

Xiaoxing Zhang

Zhenguo Lin

Weijing Zeng

Yuan Jun Hsu

Qian Ma

Yuanchun Wu

Jia Tang

Jangsoon Im

Poyen Lu

Fangmei Liu

Shipeng Chi

Yadi Zhang

Qiankun Xu

A display panel includes a light-emitting area and a cathode overlapping area, and further includes a first metal layer including a first wire located in the cathode overlapping area, a second metal layer disposed above the first metal layer and including a second wire located in the cathode overlapping area, a third metal layer disposed above the second metal layer and including an extension wire located in the cathode overlapping area, and a light-emitting device disposed above the second metal layer and located in the light-emitting area. The light-emitting device includes an anode layer, an organic functional layer, and a cathode layer in sequence. The cathode layer extends from the light-emitting area to the cathode overlapping area and is connected to the extension wire.

Display panel having an extension wiring connected to a cathode layer and method for fabricating same

A method of fabricating an array substrate is provided. The array substrate includes a display region and a non-display region. The array substrate further includes a substrate, a first transparent layer disposed on the substrate corresponding to the display region, an interlayer insulating layer disposed on the substrate, and a second transparent layer disposed on the interlayer insulating layer.

Array substrate fabricating method

The present application provides a manufacturing method of an organic light-emitting diode (OLED) panel and the OLED panel. Conventional OLED panels have problems like low aperture ratios and low capacitance. The present application overlaps a first conductive layer and a light shielding layer, a pixel electrode is connected to a source, and a planarization layer and a passivation layer in a capacitor area are removed. Therefore, an aperture ratio and capacitance of the OLED panel are greatly improved, the present application has a high degree of design freedom to be used in larger-sized OLED panels, and capacitance retention is improved.

Manufacturing method of OLED panel and OLED panel

An OLED display panel and fabrication method thereof are provided by the present application. The OLED display panel includes a substrate, a transparent conductive layer, a buffer layer, a metal oxide semiconductor layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source-drain layer, and an OLED device layer that are stacked. A light emitting direction of the OLED device layer faces the substrate. In the present application, a conductive electrode and a first electrode plate of a transparent capacitor are both patterned and formed with the transparent conductive layer, and only one process is required. Therefore, a mask is saved and fabrication cost is reduced.

OLED display panel and fabrication method thereof

The present invention provides a display panel and a manufacturing method thereof. The display panel includes a substrate, a light-shielding metal block and a transparent conductive block disposed on the substrate, a buffer layer disposed on the substrate, the light-shielding metal block, and the transparent conductive block, and an active layer pattern disposed on the buffer layer. The active layer pattern comprises a first conductive block, the first conductive block is disposed opposite to the transparent conductive block, the first conductive block is conductively formed by a semiconductor material, and the transparent conductive block and the first conductive block constitute two electrodes of a capacitor.

Display panel including transparent conductive member and manufacturing method thereof

An array substrate, a display panel, and a method of fabricating an array substrate are provided. The array substrate includes a display region and a non-display region. The array substrate further includes a substrate, a first transparent layer disposed on the substrate corresponding to the display region, an interlayer insulating layer disposed on the substrate, and a second transparent layer disposed on the interlayer insulating layer.

Array substrate and display panel design improving aperture ratio

The present disclosure provides an OLED display panel which includes a substrate, a drive circuit layer, a light-emitting functional layer, and a pixel definition layer. The light-emitting functional layer includes a light-emitting area and a non-light-emitting area. The drive circuit layer includes a buffer layer, a first electrode plate, and a second electrode plate, and the first electrode plate and the second electrode plate form a storage capacitor. It solves the technical problem of current OLED display panels having dark stripes by not depositing the first electrode plate when silicon nitride is deposited to form a first buffer layer which prevents ionic gases produced when silicon nitride is deposited from having a reduction reaction with the first electrode plate.

OLED display panel having storage capacitor and manufacturing method thereof

An array substrate, a manufacturing method thereof, and a display panel. The array substrate includes a light-emitting area and a non-light-emitting area. The array substrate comprises: a substrate; a gate insulating layer comprising a first gate insulating layer and a second gate insulating layer disposed on the substrate in sequence; and a storage capacitor disposed in the light-emitting area and comprising a first transparent electrode and a second transparent electrode. Wherein the first transparent electrode is disposed between the first gate insulating layer and the second gate insulating layer, and the second transparent electrode is disposed on the second gate insulating layer.

Array substrate, manufacturing method thereof, and display panel

A thin film transistor substrate and a method of fabricating same are provided. The thin film transistor substrate includes a substrate, a light shielding layer disposed on the substrate, a buffer layer disposed on the light shielding layer, an active layer disposed on the buffer layer, and a gate insulating layer disposed on the active layer. The gate insulating layer includes a stacked structure including a first insulating layer and a second insulating layer.

Thin film transistor substrate and method of fabricating same

The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a thin film transistor and a storage capacitor prepared on a substrate; the thin film transistor includes a gate, an active layer, and a source/drain; the storage capacitor includes a first electrode and a second electrode isolated therefrom by a dielectric layer; the gate is disposed above the first electrode and located at one end of the first electrode; and the second electrode corresponds to a portion of the first electrode non-corresponding to the gate.

Array substrate and manufacturing method thereof

Provided are a manufacturing method of an organic light emitting diode back plate and the organic light emitting diode back plate. In the manufacturing method of an OLED back plate, pixel openings and light blocking grooves correspondingly above active layers are formed in a pixel definition layer. Then, OLED light-emitting functional layers are formed in the pixel openings and the black light shielding blocks completely covering the active layers are formed in the light shielding grooves by ink jet printing, thereby effectively preventing the TFT elements from being affected by the illumination and ensuring the characteristics of the TFT elements. The structure is simple and the production cost is low.

Manufacturing method of organic light emitting diode back plate and the organic light emitting diode back plate

The present disclosure relates to an OLED display panel. The OLED display panel includes a TFT array substrate, and a flat layer on the TFT array substrate. The flat layer includes a first flat layer and a second flat layer on the first flat layer. A viscosity of the first flat layer is less than a viscosity of the second flat layer. In addition, the present disclosure also relates to a manufacturing method of the OLED display panel to enhance the performance of the OLED display panel.

Organic light emitting diode (OLED) display panel and the manufacturing method thereof

The present disclosure discloses a method of manufacturing a thin film transistor (TFT) array substrate including a step of preparing a patterned active layer on a base substrate, wherein the step includes: sequentially forming an amorphous silicon (a-Si) thin film layer and a boron-doped (B-doped) amorphous silicon germanium (a-SiGe) thin film layer on the base substrate; performing crystallization on the a-Si thin film layer and the B-doped a-SiGe thin film layer using a thermal annealing process to obtain a polycrystalline silicon (poly-Si) thin film layer and a B-doped polycrystalline silicon germanium (poly-SiGe) thin film layer; and forming the patterned active layer by using a photolithography process to etch the poly-Si thin film layer and the B-doped poly-SiGe thin film layer. The present disclosure further discloses a TFT array substrate and a display device including the TFT array substrate.

Thin film transistor array substrate, method of manufacturing the same, and display device including thin film transistor substrate

The present disclosure discloses a thin film transistor array substrate including an active layer disposed on a base substrate, wherein the active layer includes a first active region and a second active region located in a same structural layer, the first active region has a material comprising poly-silicon, and includes a first channel region, and a first source region and a first drain region that are located at both sides of the first channel region, respectively, the first source region having a first contact layer disposed thereon, the first drain region having a second contact layer disposed thereon, and materials of both the first and second contact layers being boron-doped poly-silicon; and the second active region has a material comprising metal oxide semiconductor, and includes a second channel region and a second source region and a second drain region that are located at both sides of the second channel region, respectively. The present disclosure also discloses a preparing method for the thin film transistor array substrate as mentioned above, and an OLED display device including the array substrate.

Thin film transistor array substrate and preparing method therefor, and OLED display device

A manufacturing method for a thin-film transistor array substrate is disclosed. The method includes: providing a base substrate; depositing a first metal layer on the base substrate, and patterning to form a gate electrode and a first storage electrode; depositing a gate insulation layer, wherein the gate insulation layer covers the gate electrode and the first storage electrode; depositing a metal oxide semiconductor layer, and patterning to form a metal oxide active layer; depositing a second insulation layer, and patterning to form an etching barrier layer; depositing a second metal layer, and pattering to form a source electrode, a drain electrode and a second storage electrode, wherein the first storage electrode and the second storage electrode are two electrodes of a storage capacitor; depositing a third insulation layer, and patterning to form a passivation layer; and depositing a third metal layer, and patterning to form a pixel electrode.

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Shenzhen, China

Xingyu Zhou