Socreat Electronics Technology Limited

Xingqing Wang

Zhenkun Yin

Baichuan Xiang

The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q, a PNP-type transistor Q, resistors R, R, R, R, and a capacitor C. A first end of the resistor Ris connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Qis connected with a second end of the resistor R. A source electrode of the N-type MOS transistor Qis connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Qis connected with the ground end of the storage battery by the resistor R. A collector electrode of the PNP-type transistor Qis connected with the gate electrode of the N-type MOS transistor Q, and an emitter electrode of the PNP-type transistor Qis connected with an anode (PB+) of the storage battery; a base electrode of the PNP-type transistor Qis connected with the anode (PB+) of the storage battery by the resistor R, and the base electrode of the PNP-type transistor Qis connected with the ground end of the storage battery by the resistor R. The capacitor Cis connected with the resistor Rin parallel. When the self-activation circuit is connected with the battery protection chip at first time, level of the detection pin (CS) of the battery protection chip automatically reduces, further automatically activating the battery protection system and improving reliability of the battery protection system.

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Shenzhen, China

Xingqing Wang