Samsung Electronics Co., Ltd.

Xinglong Chen

Vladimir Volynets

In-ho Choi

Sang-jin An

Hee-jeon Yang

Sung-keun Cho

Ki-Hyun Kim

Sangheon Lee

Sang-Hoon Ahn

Sang-Heon Lee

Gon-jun Kim

Siqing Lu

Sung-ho Jang

Dali Liu

Go-jun Kim

Kyu-In Shim

Yong-Ho Lim

A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.

Methods of manufacturing a semiconductor device

An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (HO) and the plasma to a process chamber.

Etching method using plasma, and method of fabricating semiconductor device including the etching method

A wafer clamping apparatus, including a plurality of support pins under a wafer, the plurality of pins to support the wafer; and a side clamp at a lateral side of the wafer, the side clamp to directly contact a lateral side of the wafer to press the wafer, the side clamp to press the wafer in a first direction or a second direction, the first direction and the second direction being different directions.

Wafer clamping apparatus

Growing community of inventors

Seongnam-si, South Korea

Xinglong Chen