Beijing Naura Microelectronics Equipment Co., Ltd.

Xingcun Li

Gang Wei

Jing Jing Wei

Xiaoyang Cheng

Dongsan Li

Changle Guan

Longchao Zhao

Mingda Qiu

Mingming Song

A reaction chamber includes an upper electrode device and a lower electrode device. The lower electrode device is disposed in the reaction chamber for carrying a workpiece to-be-processed. The upper electrode device includes a dielectric cylinder, a coil, an upper power source, an upper electrode plate, a first switch, and a second switch. The dielectric cylinder has a hollow cylindrical structure and is disposed at an upper portion of a chamber wall of the reaction chamber. The coil is arranged around the dielectric cylinder. The upper electrode plate is located above the lower electrode device. The first switch can selectively electively connect the upper power source to a first terminal of the coil or to the upper electrode plate. The second switch can selectively electrically connect a second terminal of the coil to the ground or to the upper electrode plate.

Reaction chamber and semiconductor processing apparatus

A reaction chamber is provided. The reaction chamber includes a chamber body, a dielectric window, and a power supplier. The dielectric window is provided on top of the chamber body along a first direction and hermetically connected with the chamber body. Each coil of a plurality of sets of coils is wound around an outer surface of the dielectric window at an interval along the first direction. The plurality of sets of coils are connected in parallel, with first ends electrically coupled to the power supplier for supplying power to each set of the plurality of sets of coils, and with second ends grounded. The second ends of the plurality of sets of coils are arranged in proximity between the first ends.

Reaction chamber and plasma processing apparatus

An impedance matching system is provided. The impedance matching system includes: an impedance matching device arranged between a radio frequency (RF) power supply and a reaction chamber, adapted to connect the RF power supply to the reaction chamber through a switch, and configured to automatically perform an impedance matching on an output impedance of the RF power supply and an input impedance of the impedance matching device; the switch and a load circuit, the switch being configured to enable the RF power supply to be selectively connected to the reaction chamber or to the load circuit; and a control unit configured to control the switch to connect the RF power supply to the reaction chamber or connect the RF power supply to the load circuit according to a preset timing sequence. The impedance matching device is configured to convert a continuous wave output of the RF power supply into a pulse output according to the preset timing sequence, and provide the pulse output to the reaction chamber. The preset timing sequence is obtained based on a frequency and a duty cycle of a pulsed RF signal required by a process.

Impedance matching system, impedance matching method, and semiconductor processing apparatus thereof

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Beijing, China

Xingcun Li