Anhui University

Anhui Coreach Technology Co.,ltd.

Xingang Ren

Zhixiang Huang

Kaikun Niu

Lixia Yang

Xianliang Wu

Guoda Xie

Yingsong Li

Siliang Wang

Gang Wang

Guanghui Xu

Chao Wang

Minquan Li

Xiaohui Guo

Pengbin Gui

Zhiliang Chen

Zhixiang Haung

Yaohua Xu

Wei Zeng

Guangshang Cheng

Sixian Qian

Jie Wu

Yi Li

Shuyang An

Sungen Cao

Wei Zhi

Huping Ju

You Peng

Jianxin Chen

Jirui Zhang

Feng Xiao

Ping Li

Shengyang Wei

Yong Peng

Jiayu Rao

Yali Zhao

Guoxing Sun

Qing Ci

Disclosed are a broadband millimeter-wave circularly polarized antenna element, a single-mode array, and a dual-mode array, relating to the technical field of circularly polarized antennas. A microstrip feeder is arranged on a lower surface of a second dielectric substrate of the antenna element. A coupling slot is etched on a metal ground layer, two metallized vias are formed on a first dielectric substrate, and a metal strip is tiled on an upper surface of the first dielectric substrate. Two L-shaped parasitic patches are also tiled on the first dielectric substrate. The two L-shaped parasitic patches are located on both sides of the metal strip, and the two L-shaped parasitic patches are rotationally symmetric about a center point of the upper surface of the first dielectric substrate. According to the present disclosure, a 3-dB axial ratio bandwidth of the antenna element is improved by using L-shaped parasitic patches.

Broadband millimeter wave circularly polarized antenna element, single-mode array and dual-mode array

The present disclosure belongs to the technical field of OAM antennas, and provides a frequency re-configurable OAM antenna in S band and a frequency reconfiguration method. The OAM antenna includes a lower dielectric substrate and multiple array units. Each array unit includes a metal patch, an upper dielectric substrate, an outer loop, an inner loop, a coaxial feeder, four metal probes, and four diodes. In the present disclosure, bias states of all the diodes of each array unit are controlled by applying a voltage; when all the diodes are in forward bias states, the antenna works at a high frequency; and when all the diodes are in reverse bias states, the antenna works at a low frequency. The frequency re-configurable OAM antenna in S band in the present disclosure has features of frequency reconfiguration and two OAM radiation modes, and has a stable gain over a broadband.

Frequency re-configurable orbital angular momentum (OAM) antenna with in S band and frequency reconfiguration method

The present disclosure relates to a domain decomposition method and system for electromagnetic simulation. The method includes: dividing an antenna structure model into multiple subdomains, where each of the subdomains corresponds to a structure in one to-be-simulated array antenna; subdividing each of the subdomains by a tetrahedral network to obtain multiple tetrahedrons; obtaining a vector basis function of each edge of each of the tetrahedrons according to vertex positions and lengths of the edges of the tetrahedron; and calculating an electric field value and a magnetic field value of any point in a tetrahedron to which each of the edges belongs using a vector basis function corresponding to the edge and a double curl electric field wave equation of a subdomain to which the edge belongs.

Domain decomposition method and system for electromagnetic simulation

An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.

Ultra-wideband electromagnetic band gap (EBG) structure and circuit board

Bidirectional circularly polarized antenna element and bidirectional circularly polarized array antenna are provided, and comprising a dielectric substrate, a feeder, a radiation patch, a first plane, a second plane, a first coupling assembly and a second coupling assembly which are embedded in the surface of the dielectric substrate. The first plane and the second plane of the antenna element are kept at different heights, and compared with the solution that two planes at the same height can only generate linear polarization radiation in the prior art, the circular polarization radiation can be generated, which solves the problem of linear polarization mismatch. Furthermore, two coupling assemblies are introduced into two sides of the radiation patch to enable the coupling effect with the radiation patch, such that the frequency bandwidth of the circularly polarized antenna can be greatly improved without increasing the size of the antenna.

Bidirectional circularly polarized antenna element and bidirectional circularly polarized array antenna

A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.

Silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure

A high sensitivity flexible three-dimensional force tactile sensor includes a hemispherical contact, wherein the hemispherical contact includes a tray with a groove on the surface and a hemispherical protrusion arranged in the groove. A flexible inverted cone component connected to the lower surface of the hemispherical contact, wherein a plurality of flexible triangular excitation electrode is arranged on the side surface of the flexible inverted cone component. A flexible common electrode surrounding part of the flexible triangular excitation electrode, wherein a first cavity with an opening is opened inside the flexible common electrode, parts of the flexible triangular excitation electrode and the flexible inverted cone component are arranged in the first cavity of the flexible common electrode. The flexible triangular excitation electrode and the flexible inverted cone component have no contact with the inner wall of the first cavity of the flexible common electrode to form an air cavity.

High-sensitivity flexible three-dimensional force tactile sensor and preparation method thereof

This disclosure provides a perovskite light-emitting diode with an adjustable light field, including a glass layer, an anode, a hole transport layer, an emission layer, an electron transport layer and a cathode in sequence from top to bottom. The electron transport layer is provided with a periodic nano-grating structure.

Perovskite light-emitting diode with adjustable light field

Growing community of inventors

Hefei, China

Xingang Ren