The Boeing Company

Theboeing Company

Xing-Quan Liu

Christopher M Fetzer

Daniel C Law

Richard Roland King

Nasser H Karam

Joseph Charles Boisvert

Dimitri Daniel Krut

Kenneth M Edmondson

William D Hong

Eric Rehder

Nassar H Karam

In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.

Solar cell structures for improved current generation and collection

Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material.

Multi-layer back surface field layer in a solar cell structure

A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.

Solar cell with delta doping layer

In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising AlGaInAs and a second portion comprising GaInP. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.

Optoelectric devices comprising hybrid metamorphic buffer layers

Growing community of inventors

Arcadia, CA, United States of America

Xing-Quan Liu