Applied Materials, Inc.

Xing Lin

Juan Carlos Rocha-Alvarez

Jianhua Zhou

Ramprakash Sankarakrishnan

Andrew Nguyen

Xiaoping Zhou

Anchel Sheyner

Douglas A Buchberger, Jr

Zheng John Ye

Dale R Dubois

Bozhi Yang

Jennifer Y Sun

Valentin Nikolov Todorow

Kwangduk Douglas Lee

Dmitry Lubomirsky

Hiroji Hanawa

Ganesh Balasubramanian

Bok Hoen Kim

Amit Kumar Bansal

Michael D Willwerth

Jay D Pinson, Ii

Samer Banna

Hari K Ponnekanti

Mukund Srinivasan

Ren-Guan Duan

Jian J Chen

Prashant Kumar Kulshreshtha

Abdul Aziz Khaja

Douglas Buchberger

Konstantin Makhratchev

Sumanth Banda

Sungwon Ha

Swayambhu Prasad Behera

Ningli Liu

Jason K Foster

Uwe Paul Haller

Sehn Thach

Tse-Chiang Wang

Addepalli Sai Susmita

A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.

Multi-zone pedestal for plasma processing

Embodiments of the present disclosure provide an improved electrostatic chuck for supporting a substrate. The electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, a plurality of tabs projecting from the substrate supporting surface of the chuck body, wherein the tabs are disposed around the circumference of the chuck body, an electrode embedded within the chuck body, the electrode extending radially from a center of the chuck body to a region beyond the plurality of tabs, and an RF power source coupled to the electrode through a first electrical connection.

Ceramic heater and esc with enhanced wafer edge performance

Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.

Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers

A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft.

Dual-zone heater for plasma processing

Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Substrate support with symmetrical feed structure

Embodiments of the present disclosure generally relate to a substrate support assembly in a semiconductor processing chamber. The semiconductor processing chamber may be a PECVD chamber including a substrate support assembly having a substrate support and a stem coupled to the substrate support. An RF electrode is embedded in the substrate support and a rod is coupled to the RF electrode. The rod is made of titanium (Ti) or of nickel (Ni) coated with gold (Au), silver (Ag), aluminum (Al), or copper (Cu). The rod made of Ti or of Ni coated with Au, Ag, Al or Cu has a reduced electrical resistivity and increased skin depth, which minimizes heat generation as RF current travels through the rod.

Ceramic heater with enhanced RF power delivery

Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1&#xd7;10ohm-cm to about 1&#xd7;10ohm-cm in a temperature of about 250&#xb0; C. to about 700&#xb0; C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600&#xb0; C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

High temperature electrostatic chuck with real-time heat zone regulating capability

Embodiments of the present invention provide chamber components having a protective element for shielding bonding material from processing environments in a processing environment. The protective element may include protective seals, protective structures, erosion resistive fillers, or combinations thereof. Embodiments of the present invention reduce erosion of bonding material used in a processing chamber, thus, improving processing quality and reducing maintenance costs.

Methods and apparatus toward preventing ESC bonding adhesive erosion

Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.

Methods and apparatus for controlling substrate temperature in a process chamber

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San Jose, CA, United States of America

Xing Lin