Brewer Science, Inc.

Xing-Fu Zhong

Tony D Flaim

Rama Puligadda

Jeremy McCutcheon

Jyoti K Malhotra

John Cleaon Moore

Tingji Tang

Runhui Huang

Gu Xu

Wenbin Hong

Dongshun Bai

Chenghong Li

Xiao Liu

Kimberly Yess

Qi Wu

Ramachandran K Trichur

Boyu Zhang

Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.

Superplanarizing spin-on carbon materials

The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250&#xb0; C. to about 350&#xb0; C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.

Polyimides as laser release materials for 3-D IC applications

Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Multiple bonding layers for thin-wafer handling

Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst. The preferred catalyst comprises platinum. Unlike prior art silicone systems, the inventive composition can be provided in a one-part form due to a substantially improved pot life. The compositions can be spin- or spray-applied, followed by baking to crosslink the polymers and form a cured layer. The inventive cured layers have high refractive indices and light transmissions.

Silicone polymers with high refractive indices and extended pot life

A cleaning composition for removing temporary wafer bonding material is provided. The cleaning composition comprises an alkylarylsulfonic acid and an aliphatic alcohol dispersed or dissolved in a hydrocarbon solvent system. Methods of separating bonded substrates and cleaning debonded substrates using the cleaning composition are also provided. The invention is particularly useful for temporary bonding materials and adhesives. The methods generally comprise contacting the bonding material with the cleaning solution for time periods sufficient to dissolve the desired amount of bonding material for separation and/or cleaning of the substrates.

Cleaning composition for temporary wafer bonding materials

New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.

Acid-etch resistant, protective coatings

New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.

Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride

New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.

Negative photoresist for silicon KOH etch without silicon nitride

Photocurable, conductive, and transparent polymer coating compositions and methods of using the same are provided. The compositions include a photopolymer and an electrically conductive polymer dissolved or dispersed in a solvent system. Preferred photopolymers include water-miscible, multifunctional acrylates. Preferred electrically conductive polymers include poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSS). The compositions preferably also contain a photoinitiator and may contain a water-immiscible acrylate and/or a surfactant. The compositions are applied to substrates and exposed to actinic radiation such as ultraviolet (UV) light to form a cured, durable, conductive, and transparent coating.

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Rolla, MO, United States of America

Xing-Fu Zhong