Huawei Technologies Co., Limited

Xinfang Liu

Liang Zhang

Meng Wang

Yusong Chi

Hongyu Wang

Min Yi

Zhuobiao He

Jianjun Zhou

Yanxiang Liu

Xinrong Hu

Miao Xu

A field-effect transistor structure includes a semiconductor substrate, a metal gate, a metal trench for source, a metal trench for drain, an etching-stop layer, and a gate contact. The etching-stop layer is overlaid on the metal trench for source and the metal trench for drain. The gate contact is above an active region.

FinFET structure having a gate contact above a metal gate and straddling the boundary of an active region

An equivalent radio frequency (RF) notch filter, an RF chip, and a receiver are provided. The equivalent RF notch filter includes: a local oscillation (LO) circuit, configured to provide a LO frequency signal; configured to be connected in parallel with the main chain, and down-convert signals of the main chain; and a frequency selective circuit realized by impedance difference, configured to provide different impedances for down-converted signals with different frequencies from the mixing circuit, so as to absorb the signals that need to be suppressed.

Equivalent radio frequency notch filter, radio frequency chip, and receiver

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Shenzhen, China

Xinfang Liu