Dynax Semiconductor, Inc.

Xinchuan Zhang

Naiqian Zhang

Fengli Pei

Xingxing Wu

Embodiments of the present disclosure provide a semiconductor device and a method for manufacturing the same. The semiconductor device includes an active region and an inactive region located outside of the active region, the semiconductor device including a substrate, a semiconductor layer including a first semiconductor layer located in the active region and a second semiconductor layer located in the inactive region, a source, a drain, and a gate. A via hole penetrated through the substrate and the semiconductor layers below the source is provided below the source. A part of the via hole is located in the second semiconductor layer of the inactive region and penetrates at least one part of the second semiconductor layer.

Semiconductor device and method for manufacturing the same

A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path, wherein a part of the source field plate above the gate electrode has a varying distance from an upper surface of the semiconductor layer. A method of manufacturing such a semiconductor device is also disclosed.

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Kunshan, China

Xinchuan Zhang