Commissariat a L'energie Atomique Et Aux Energies Alternatives

Aledia

Xin Zhang

Philippe Gilet

Bruno-Jules Daudin

Bruno Gayral

The invention relates to an optoelectronic device () comprising at least one three-dimensional semiconductor structure () extending along a longitudinal axis (&#x394;) substantially orthogonal to a plane of a substrate () on which same lies, and comprising: a first doped portion (), extending from one surface of the substrate () along the longitudinal axis (&#x394;); an active portion () comprising a passivation layer () and at least one quantum well () covered laterally by said passivation layer (), the quantum well () of the active portion () having a mean diameter greater than that of said first doped portion (), said active portion () extending from the first doped portion () along the longitudinal axis (&#x394;); and a second doped portion (), extending from the active portion () along the longitudinal axis (&#x394;). The invention is characterized in that the device comprises a plurality of three-dimensional semiconductor structures () extending substantially in parallel with one another, the active portions () of which are in mutual contact.

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Grenoble, France

Xin Zhang