Yangtze Memory Technologies Co., Ltd.

Xin Yun Huang

Zhiliang Xia

Qi Wang

Xiang Fu

Zhi Chao Du

Huang Peng Zhang

Hua Min Cao

Shu Bing Xu

Wen Wen Dong

Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a plurality vertical memory strings disposed through an alternating conductor/dielectric stack. Each of the memory strings includes a composite dielectric layers and a TFET semiconductor layer. The TFET semiconductor layer includes an n-type semiconductor layer and a p-type semiconductor layer.

Tunneling field effect transistor 3D NAND data cell structure and method for forming the same

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Hubei, China

Xin Yun Huang