Nxp B.v.

Xin Yang

Mark Pieter Van Der Heijden

Dominicus Martinus Wilhelmus Leenaerts

Gerben Willem De Jong

Jozef Reinerus Maria Bergervoet

Lukas Frederik Tiemeijer

Mustafa Acar

Jasper Pijl

Rana Azhar Shaheen

Alessandro Baiano

Zhe Chen

Dominicus Martinus Wilhelmus Leenaerrts

An attenuation circuit comprising: a connection-node for connecting to an RF connection; an isolation-capacitor connected in series between the connection-node and an internal-node; a first-bias-resistor connected in series between a first-control-node and the internal-node; a second-bias-resistor connected in series between the internal-node and a second-control-node; a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node; a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node; a first-decoupling-capacitor connected in series between the first-control-node and the reference-node; and a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.

Attenuation circuit

A circuit includes a common terminal, a first terminal, and a second terminal. The common terminal is coupled to first and second circuit branches at a branch node. The first and second circuit branches include a first and second quarter wavelength transmission line having a first end coupled to the branch node and a second end coupled to the first and second terminals. The first and second terminals are coupled together via a branch-interconnection arrangement. The circuit includes a first switched arrangement with a first switch having a first and second switch-terminal. The first switch-terminal is coupled to the common terminal, and a first resistor and a first capacitor are arranged in parallel and coupled between the second switch-terminal and a reference terminal. The circuit also includes a second switched arrangement coupled to the first terminal. The first quarter wavelength transmission line is coupled between the first and second switched arrangements.

Circuit with first and second terminals coupled together via a branch-interconnection arrangement

A metal oxide semiconductor, MOS, device () is described that includes a gate terminal, at least one source terminal and at least one drain terminal, wherein at least one source terminal and at least one drain terminal are formed of metal and are connected to a number of respective contact vias. A plurality of local interconnect layers, LIL, () are connected respectively to the least one source terminal and at least one drain terminal through the number of respective contact vias, wherein the at least one source terminal and the at least one drain terminal respectively connected to the plurality of LIL () are configured such that: the at least one source terminal and the at least one drain terminal do not overlap in a first direction () and a second direction () that is orthogonal to the first direction (); and the at least one source terminal and the at least one drain terminal do not overlap or only a proportion of the at least one source terminal and the at least one drain terminal overlap in a third direction (), where the third direction () is orthogonal to both the first direction () and the second direction ().

Metal oxide semiconductor device

A radio frequency, RF, auto-transformer circuit () and method () of constructing a RF auto-transformer are described. The RF, auto-transformer circuit () includes: an inner coil formed () with a first metal layer (MT) to create a first shunt inductor (), wherein at least a portion of the inner coil is overlayed () with a second metal layer (MT) that creates a first series inductor () that exhibits inductive coupling to the first shunt inductor (). An outer coil is formed () with the first metal layer (MT) that creates a second series inductor (), where the outer coil is located adjacent the inner coil and provides inductive coupling between the second series inductor () and each of the first shunt inductor () and first series inductor (). At least a portion of the outer coil is overlayed () with the second metal layer (MT) that creates a second shunt inductor () that exhibits inductive coupling between the second shunt inductor () and each of the first shunt inductor () and first series inductor () and second series inductor (). The outer coil is connected () to the inner coil using vias and the respective first metal layer (MT) is connected to the second layer (MT) using vias.

Radio frequency auto-transformer, radio frequency device and method of construction of an auto-transformer

A Wilkinson power combiner () is described that includes: at least one input port () coupled to at least one output port () by at least two power combining stages. A first power combining stage () of the at least two power combining stages is configured as a single-stage first frequency pass circuit and a second power combining stage () of the at least two stages is configured as a single-stage second frequency pass circuit, and wherein the first frequency is different to the second frequency.

Wilkinson power combiner, communication unit and method therefor

A Wilkinson power combiner () is described that includes a high-pass, HP, frequency circuit (), wherein the HP frequency circuit () comprises at least one of: (i) one input port () coupled to at least two output ports () via at least two paths; and an input shunt inductor () coupling the input port () to ground; wherein the one input port () is coupled to the at least two output ports () via respective series capacitances () on the at least two paths, which in cooperation with the input shunt inductor () forms a first HP frequency circuit; and (ii) at least one resistor ()-inductor (), R-L isolation circuit () configured to couple the at least two output ports () that forms a second HP frequency circuit.

An RF transceiver front end includes a receiver limb including a length of transmission line, an impedance matching network, a downstream shunt switch and a downstream further receiver component and a transmitter limb. The impedance matching network is configured to transform the input impedance of the further receiver component to match the input impedance of the receiver limb when the shunt switch is open and the RF transceiver front end is operable in receiver mode. The impedance matching network is further configured to transform the input impedance of the shunt switch to present an open circuit as the input impedance of the receiver limb when the shunt switch is closed and the RF transceiver front end is operable in transmitter mode. The length of transmission line can be from zero to less than &#x3bb;/4 at the operating frequency of the RF transceiver.

RF switching

A radio frequency, RF, switch circuit () includes at least one first PiN diode device () configured to sink or source a first alternating current; and an impedance inversion circuit (), connected to the at least one first PiN diode device and arranged to provide a transformed impedance between a first side of the impedance inversion circuit and a second side of the impedance inversion circuit. The RF switch further includes a second diode-based device () configured to source or sink a second alternating current; and a bias circuit () connected to at least one of the at least one first PiN diode device and the second diode-based device, wherein the at least one first PiN diode device cooperates with the second diode-based device as a push-pull current circuit.

Radio frequency switch circuit, communication unit and method therefor

Switch arrangement

A bias circuit for a bipolar RF amplifier is described. The bias circuit includes a current source coupled to a bias network. The bias network supplies a base current to the transistors in the amplifier circuit of the bipolar RF amplifier. The bias circuit includes a buffer coupled to the bias network and to the bipolar RF amplifier. The buffer provides additional base current to the amplifier circuit of bipolar RF amplifier and sinks avalanche current generated by the amplifier circuit of the bipolar RF amplifier.

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Eindhoven, Netherlands

Xin Yang