Suzhou Oriental Semiconductor Co., Ltd.

Southeast University

Jiangsu University

Hohai University

Xin Wang

Wei Liu

Yi Gong

Lei Liu

Yuanlin Yuan

Zhendong Mao

Zhe Chen

Aiguo Song

Baoguo Xu

Rui Wang

Zhenyi Xu

Huangqiu Zhu

Zhijian Wang

Wencai Hu

Qianqian Lu

Weifeng Peng

A variable stiffness hand exoskeleton device based on antagonistic driving, includes a power mechanism, a support base, a spring-link composite transmission mechanism, and a distal finger sleeve connected to a power output end of the spring-link composite transmission mechanism for fingers. The power mechanism drives the fingers to perform rotational movements through the spring-link composite transmission mechanism. The distal finger sleeve is fixed to a distal joint periphery of a finger joint using a first elastic adjustment band, and provides force feedback to an end of the finger joint under driving force of a link structure. An inner surface of the support base is contoured to match a palm, and a back of the support base is provided with a rotary support seat and a motor fixing seat. A motor group of the power mechanism is mounted on the motor fixing seat.

Variable stiffness hand exoskeleton device based on antagonistic driving

A manufacturing method of a semiconductor power device includes the following steps: An n-type substrate is etched in a self-aligning manner using a first insulating layer, a second insulating layer, and a third insulating layer as a mask to form a second groove in the n-type substrate. A fourth insulating layer and a gate are formed in the second groove.

Manufacturing method of semiconductor power device

Provided is an insulated gate bipolar transistor (IGBT) device. The IGBT device includes p-type body regions located on a top of an n-type drift region, a first n-type emitter region located within the p-type body region; a first gate structure located over the p-type body region, where the first gate structure includes a first gate dielectric layer, a first gate and an n-type floating gate which are located above the first gate dielectric layer, where the n-type floating gate is located on a side close to the n-type drift region in a lateral direction; an insulating dielectric layer located between the n-type floating gate and the first gate; and one opening in the first gate dielectric layer. The n-type floating gate is in contact with the p-type body region to form a p-n junction diode through the one opening.

IGBT device

Provided is an insulated gate bipolar transistor power device. The IGBT power device includes a gate dielectric layer located above the two p-type body regions and the n-type drift region between the two p-type body regions, an n-type floating gate located above the gate dielectric layer; a gate located above the gate dielectric layer and the n-type floating gate; an insulating dielectric layer between the gate and the n-type floating gate; a first opening located in the gate dielectric layer, where the n-type floating gate is in contact with one of the two p-type body regions through the first opening to form a p-n junction diode; and a second opening located in the gate dielectric layer, where the n-type floating gate is in contact with the other of the two p-type body regions through the second opening to form the p-n junction diode.

IGBT power device

The controller comprises a displacement controller and a rotating speed controller. The displacement controller includes a vibration force compensation control module and a dead-time vibration compensation module. The vibration force compensation control module receives actual displacements and a rotor mechanical angle and outputs corresponding vibration compensation forces. The vibration force compensation control module comprises a first neural network band-pass filter, a second neural network band-pass filter, a third PID controller, and a fourth PID controller. The dead-time vibration compensation module receives a rotor electrical angle and an actual quadrature-direct axis currents and an actual direct axis current and outputs a quadrature-direct axis compensation voltages and a direct axis compensation voltage. The dead-time vibration compensation module consists of a third neural network band-pass filter in a direct axis direction, a fourth neural network band-pass filter in a quadrature axis direction, a sixth PI controller, and a seventh PI controller.

Vibration compensation controller with neural network band-pass filters for bearingless permanent magnet synchronous motor

Provided is an IGBT device. The IGBT device includes an MOSFET cell array, where each MOSFET cell includes a p-type body region located at the top of an n-type drift region, an n-type emitter region located in the p-type body region, and a gate dielectric layer, a gate electrode and an n-type floating gate which are located above the p-type body region. The gate electrode is located above the gate dielectric layer, the n-type floating gate is located above the gate dielectric layer, and the gate electrode acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.

A memory-guide simulated pattern recognition method, wherein time sequence information in a memory prior to the current moment is introduced to detect motion information by means of pattern recognition using samples in the sequence as a reference is described. A memory invocation mechanism in a human brain is simulated, and different memory segments are used as elements to detect motion changes in multiple memory segments and the corresponding motion states; a memory attenuation mechanism is simulated, and motion detection results in multiple segments are combined to enhance motion change information in the current moment and form a motion state in a continuous time sequence, so as to form a motion detection result of the current moment as a pattern recognition result.

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Jiangsu, China

Xin Wang