Chinese Academy of Sciences

Xin Ou

Kai Huang

Xi Wang

Qi Jia

Tiangui You

Shibin Zhang

Pengcheng Zheng

Wenhui Xu

Lixing You

Weijun Zhang

Hongyan Zhou

Chengli Wang

Zhenghao Shen

The present disclosure provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device, and a preparation method. An unintentionally doped gallium oxide layer () is transferred to a highly doped and highly thermally conductive heterogeneous substrate () by bonding and thinning; then a heavily doped gallium oxide layer () is formed on the gallium oxide layer by treating and ion implantation, thereby preparing the gallium oxide semiconductor structure including the heterogeneous substrate (), the gallium oxide layer (), and the heavily doped gallium oxide layer () stacked in sequence. In the vertical gallium oxide-based power device prepared on the basis of the gallium oxide semiconductor structure, the gallium oxide layer () is a thicker intermediate layer and a carrier concentration of the gallium oxide layer () is less than that of the heavily doped gallium oxide layer (). Therefore, the breakdown voltage of the device is also increased through structural design. The highly thermally conductive heterogeneous substrate () improves the heat dissipation performance of the device. The device with multiple Fin structures provides a large amount of current.

Gallium oxide semiconductor structure, vertical gallium oxide-based power device, and preparation method

The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby. The method comprises: providing a gallium oxide single-crystal wafer () having an implantation surface (a) (S); performing an ion implantation from the implantation surface (a) into the gallium oxide single-crystal wafer (), such that implanted ions reach a preset depth and an implantation defect layer () is formed at the preset depth (S); bonding the implantation surface (a) to a high thermal conductivity substrate () to obtain a first composite structure (S); performing an annealing treatment on the first composite structure such that the gallium oxide single-crystal wafer () in the first composite structure is peeled off along the implantation defect layer (), thereby obtaining a second composite structure and a third composite structure (S); and performing a surface treatment on the second composite structure to remove a first damaged layer (), so as to obtain a gallium oxide semiconductor structure comprising a first gallium oxide layer () and the high thermal conductivity substrate () (S). In the gallium oxide semiconductor structure formed using the above method, the first gallium oxide layer () is integrated with the high thermal conductivity substrate () to effectively improve the thermal conductivity of the first gallium oxide layer ().

Gallium oxide semiconductor structure and preparation method therefor

The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 &#x3a9;&#xb7;cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

High-frequency surface acoustic wave resonator and method for making the same

The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

Method related to tuning the performance of superconducting nanowire single photon detector via ion implantation

A method for preparing a film bulk acoustic wave device by using a film transfer technology includes: 1) providing an oxide monocrystal substrate; 2) implanting ions from the implantation surface into the oxide monocrystal substrate, and then forming a lower electrode on the implantation surface; or vice versa; and forming a defect layer at the preset depth; 3) providing a support substrate and bonding a structure obtained in step 2) with the support substrate; 4) removing part of the oxide monocrystal substrate along the defect layer so as to obtain an oxide monocrystal film, and transferring the obtained oxide monocrystal film and the lower electrode to the support substrate; 5) etching the support substrate from a bottom of the support substrate to form a cavity; 6) forming an upper electrode on the surface of the oxide monocrystal film.

Method for preparing film bulk acoustic wave device by using film transfer technology

A phase-transition type vanadium oxide material and a preparation method therefor. The preparation method includes the following steps: providing a vanadium oxide base material, and implanting gaseous ions into the vanadium oxide base material, to obtain a phase-transition type vanadium oxide material having a preset phase-transition temperature. Subsequently, optionally, further annealing may be performed to adjust a bubble generation status in vanadium oxide after the gaseous ions are implanted, to further adjust the stress and strain and the phase-transition temperature. The method for preparing a phase-transition type vanadium oxide material consistent with the present invention has simple steps, desirable process reproducibility, high flexibility, and the phase-transition temperature of vanadium oxide can be continuously adjusted by changing an implantation dosage of the gaseous ions. In addition, the present invention has desirable compatibility, and can be combined with other phase-transition temperature methods, to achieve a larger phase-transition temperature adjustment range.

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Shanghai, China

Xin Ou