Disco Corporation

Xin Lu

Makoto Tanaka

Yurika Araya

Hideki Koshimizu

Zach Powers

Atsushi Kubo

Tetsukazu Sugiya

Kokichi Minato

Eric Eisenberg

Sax Liao

A processing method for a wafer having a chamfered portion on an outer circumference thereof includes a step of irradiating a laser beam of a transmission wavelength to the wafer along an outer circumferential edge of the wafer at a position on an inner side of a predetermined distance from the outer circumferential edge of the wafer to form an annular modified region having a depth from a front face of the wafer to a finish thickness, a step of irradiating a laser beam of a transmission wavelength to the wafer on an outer circumferential portion of the wafer to radially form a plurality of modified regions having the depth from the front face of the wafer to the finish thickness on the outer circumferential portion of the wafer, and a step of grinding a back face of the wafer to thin the wafer to the finish thickness.

Processing method for wafer

A wafer processing method is used in processing a wafer including a device area and a peripheral marginal area surrounding the device area. The device area has a plurality of devices and an electrode connected to each device. The wafer processing method includes the steps of cutting a first area of the peripheral marginal area, fixing the front side of the wafer through an adhesive to a carrier substrate, grinding a back side of the wafer, supplying a chemical solution to the back side of the wafer to thereby etch the wafer such that the electrode projects from the back side of the wafer, forming an insulating film on the back side of the wafer, cutting a second area of the peripheral marginal area, the second area being not in contact with the adhesive, thereby removing the second area, and polishing the insulating film.

Wafer processing method

A packaged wafer processing method includes a processing step of processing each division line formed on a packaged wafer by using a laser beam applying unit and a feeding mechanism, and indexing the wafer by a preset index amount 'a' corresponding to the pitch of the division lines by using an indexing mechanism, thereby forming a laser processed groove along each division line. A correcting step images the next division line to be processed in an exposed peripheral portion of the wafer and the laser processed groove just formed along the present division line, at any arbitrary time during the processing step. The distance 'b' between the next division line and the laser processed groove just formed is determined, and then a correction index amount &#x201c;c&#x201d; is calculated by using the deviation corresponding to the difference (a&#x2212;b) between the preset index amount &#x201c;a&#x201d; and the distance &#x201c;b&#x201d;.

Packaged wafer processing method

Disclosed herein is a method of manufacturing a packaged wafer including a step of forming grooves in a face side of a wafer along projected dicing lines to a depth larger than a finished thickness of the wafer, a step of forming a ring-shaped groove in and along a boundary between a device area and an outer peripheral excess area of the wafer to a depth larger than the depth of the grooves, and a step of placing a recess mold of a molding apparatus in engagement with the wafer so that a side wall of the recess mold is placed on a bottom of the ring-shaped groove and filling a space between the recess mold and the wafer with a molding resin.

Method of manufacturing packaged wafer

A wafer has a plurality of projected dicing lines on a face side thereof, a plurality of devices formed in respective areas demarcated on the face side of the wafer by the projected dicing lines, a plurality of grooves defined in the projected dicing lines, and a molding resin laid on the devices and embedded in the grooves. An outer circumferential portion of the molding resin is removed, exposing the molding resin embedded in the grooves. The molding resin embedded in the grooves exposed on an outer circumferential portion of the wafer is detected, and a laser beam is focused at a transversely central point on the molding resin embedded in the grooves. The laser beam is applied to the molding resin along the grooves, thereby forming dividing grooves in the wafer to allow the wafer to be divided into individual devices.

Method of processing wafer

Disclosed herein is a packaged wafer manufacturing method including the steps of forming a groove along each division line on the front side of a wafer, each groove having a depth greater than the finished thickness of the wafer, next removing a chamfered portion from the outer circumference of the wafer to thereby form a step portion having a depth greater than the depth of each groove, next setting a die of a molding apparatus on the bottom surface of the step portion of the wafer in the condition where a space is defined between the die and the wafer, and next filling a mold resin into this space. Accordingly, the device area of the wafer is covered with the mold resin and each groove of the wafer is filled with the mold resin to thereby obtain a packaged wafer.

Packaged wafer manufacturing method and device chip manufacturing method

A package wafer processing method includes a processing step of processing a package wafer along planned dividing lines by a laser beam irradiation unit and forming processing grooves in the package wafer. The processing step includes detecting a processing groove and an exposed key pattern closest to the planned dividing line corresponding to the processing groove at a predetermined timing and measuring, as a deviation amount, the difference between the distance from the processing groove to the exposed key pattern and the distance that is registered in a registration step and is from the planned dividing line corresponding to the processing groove to the closest key pattern. An indexing feed mechanism is corrected according to the deviation amount.

Package wafer processing method

A wafer is divided into device chips each of which is surrounded by a mold resin. The wafer has a plurality of devices arranged like a matrix with a spacing having a predetermined width, the front side of each device being covered with the mold resin, the spacing being filled with the mold resin to form a street between any adjacent ones of the devices. The wafer processing method includes a division start point forming step of forming a division start point along each street at the lateral center of the mold resin filling the spacing and a dividing step of applying an external force to the wafer after performing the division start point forming step, thereby laterally dividing each street into two parts at the division start point to obtain the device chips divided from each other, each device chip being surrounded by the mold resin.

A wafer processing method includes a first correction step of measuring a distance 'a' between a first cut groove previously formed by a first cutting unit and a division line for the next cut groove, and correcting an actual index amount by using a deviation 'b' of the first cutting unit equivalent to the difference between the distance &#x201c;a&#x201d; and a proper index amount of the first cutting unit, and a second correction step of forming a measurement groove by using a second cutting unit along the division line for the next cut groove, measuring a distance &#x201c;c&#x201d; between the first cut groove and the measurement groove, and correcting an actual index amount of the second cutting unit by using a deviation &#x201c;d&#x201d; equivalent to the difference between the distance &#x201c;c&#x201d; and a proper index amount of the second cutting unit during the cutting step.

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Tokyo, Japan

Xin Lu