Peking University

Huawei Technologies Co., Limited

Sichuan Haichelifu Oil and Gas Engineering Technology Service Co., Ltd

Xin He

Shengdong Zhang

Xiang Xiao

Yang Shao

Yi Tong Wang

Guoqing Xie

Tingwei Xu

Dedong Han

Longyan Wang

Ruqi Han

Yuxi Liu

A base station antenna includes a plurality of antenna arrays and a phase dispersion circuit. The plurality of antenna arrays include a plurality of radiating elements, and the plurality of radiating elements include a first radiating element and a second radiating element that have a horizontal spacing. The phase dispersion circuit is configured to adjust a phase slope of an electromagnetic signal of the first radiating element in an operating frequency band and/or a phase slope of an electromagnetic signal of the second radiating element in the operating frequency band.

Base station antenna and base station

A multi-plunger coordinated gas lift liquid drainage system and liquid drainage method thereof, the system operates in a reciprocating manner. A large-section liquid column and a gas column within a tubing is divided into multiple units of liquid columns, plungers and gas columns by a plurality of plungers; the units form a series connection, and the plungers in the tubing move up and down respectively to transfer the liquid load cooperatively. A liquid is drained from a wellbore step by step, and the pressure formed by a small section of liquid column disappears each time a small section of liquid column is drained. The pressure of each stage of gas column thereunder is reduced, and the gas columns are expanded step by step.

Multi-plunger coordinated gas lift liquid drainage system and liquid drainage method thereof

A method for fabricating a metal oxide thin film transistor comprises selecting a substrate and fabricating a gate electrode thereon; growing a layer of dielectric or high permittivity dielectric on the substrate to serve as a gate dielectric layer; growing a first metal layer on the gate dielectric layer and a second metal layer on the first metal layer; fabricating a channel region at a middle position of the first metal layer and a passivation region at a middle position of the second metal layer; anodizing the metals of the passivation region and the channel region at atmospheric pressure and room temperature; fabricating a source and a drain; forming an active region comprising the source, the drain, and the channel region; depositing a silicon nitride layer on the active region; fabricating two electrode contact holes; depositing a metal aluminum film; and fabricating two metal contact electrodes by photolithography and etching.

Method for fabricating a metal oxide thin film transistor

A method for fabricating a metal oxide thin film transistor comprises the steps of: selecting a substrate and fabricating a gate electrode on the substrate; growing a layer of dielectric or a high permittivity dielectric on the substrate, and allowing the layer of dielectric or high permittivity dielectric to cover the gate electrode to serve as a gate dielectric layer; growing a metal layer on the gate dielectric layer; fabricating a channel in the middle position of the metal layer; anodizing the metal of the channel at atmospheric pressure and room-temperature; fabricating an active region comprising a source, a drain, and the channel; depositing a silicon nitride layer on the active region and forming two contact holes of the electrodes on the silicon nitride layer; and depositing a layer of aluminum film and fabricating two metal contact electrodes of the thin film transistor.

Method for fabricating a metallic oxide thin film transistor

Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode. Light is from the bottom of the substrate during exposure. After the development, a photoresist pattern aligned with the bottom gate electrode is formed on the surface of the conductive thin film. The top gate electrode aligned with the bottom gate electrode is formed by etching the conductive thin film. The bottom gate electrode can be used as a mask, which may save the cost for manufacturing the transistor and improve the accuracy of alignment between the top gate electrode and the bottom gate electrode and the performance of the dual-gate thin film transistor.

Method for manufacturing transistor

Disclosed is a method for manufacturing a self-aligned metal oxide thin film transistor. According to the present invention, a metal oxide semiconductor layer having a high carrier concentration is formed, and then a channel region which is self-aligned with a gate electrode is oxidized by a plasma having oxidbillity so that the channel region has a low carrier concentration and the source and drain regions have high carrier concentrations while the resulting transistor has a self-aligned structure. In addition, the threshold voltage of the transistor is controlled by the conditions under which the channel region of the transistor is subsequently oxidized by plasma having oxidbillity at a low temperature. Therefore, the controllability of the characteristics of the transistor is improved significantly, and the manufacturing process is simplified.

Growing community of inventors

Shenzhen, China

Xin He