Hamamatsu-photonics K.k.

Xin Gao

Yujin Zheng

Hirofumi Kan

Kazunori Shinoda

Hiroshi Okamoto

Masayuki Saitoh

Hiroyuki Ohashi

This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90&#xb0;. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.

Semiconductor laser apparatus having collimator lens and path rotator

Semiconductor laser device including laser array or stack first collimator, path rotator, and an optical element

A beam-condensing unit has a first light source, a second light source, and a condenser mirror. The first and second light sources output a plurality of first and second light fluxes arrayed along a first direction, respectively. A condenser mirror has first and second optical plates that intersect with each other. The first optical plate includes a plurality of first reflecting portions that are arrayed along the first direction and reflect the first light fluxes, respectively. The second optical plate includes a plurality of second reflecting portions that are arrayed along the first direction alternately with the first reflecting portions and reflect the second light fluxes, respectively.

Light collecting device and light collecting mirror

A semiconductor laser apparatus capable of reducing a spread angle of emission light with downsizing has an active region between first and second end surfaces. A first reflection structure and a partial reflection structure are provided on the first end surface side. The end surface of the active region is divided into a total reflection region and a partial reflection region in combination with the first reflection structure and partial reflection structure. A laser resonator includes the first reflection structure and partial reflection structure. A second reflection structure is positioned on the way of a resonance optical path of the laser resonator. Light emitted within the active region propagates on a resonance optical path. An induction emission is produced. The semiconductor laser carries out a laser oscillation. Of the light arriving at the partial reflection structure, the portion transmitted through the partial reflection structure is outputted outside the apparatus.

Semiconductor laser apparatus

Refracting optical systemandrelatively shift the second laser beam groups together with respect to the first laser beam groups along the layering direction. The transmission/reflecting optical system for alignmentR,R,S andS are used, so that the laser beam patterns comprised of the first and second laser beam groups which are emitted from the transmission/reflecting optical systemsR,R,S andS are shaped to be long in the layering direction of the laser bar, and since separate optical systems are used for shift and alignment, respectively, an individual optical system has a simple configuration.

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Hamamatsu, Japan

Xin Gao