The Centre for Integrated Photonics Limited

Other

Xin Chen

Michael J Robertson

David W Smith

Alistair James Poustie

Graeme Douglas Maxwell

David Graham Moodie

Alexander Giles Davies

Ian Lealman

Edmund Harold Linfield

Christopher David Wood

Paul John Cannard

John Cunningham

Paul Cannard

Michael Robertson

A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

Generating and detecting radiation

An optical amplifier has a low polarization dependent gain. The amplifier includes a gain medium including a plurality of adjoining semiconductor layers to provide optical gain wherein the adjoining semiconductor layers define one or more quantum wells for electrons and are operative to provide both direct and indirect electron-hole transitions in the gain medium. A first quantized electron energy level in the conduction band and a first quantized hole energy level in the valence band is located in a first layer. A further first quantized hole energy level in the valence band is located in an adjacent second layer.

Opto-electronic device

An optoelectronic device has at least a first facet (S), a first waveguide () and a second waveguide (). The waveguides are substantially coincident at the first facet (), such that light travelling along the first waveguide () is reflected into the second waveguide () by the first facet (). The first facet () is formed by precision cleaving. Preferably an etch feature is incorporated in the same mask level as that to define the waveguide core.

Folded cavity of optoelectronic devices

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Ipswich, United Kingdom

Xin Chen