China University of Geosciences (Wuhan)

Xiamen Tianma Display Technology Co., Ltd.

Tibet Julong Copper Co., Ltd.

Chinese Academy of Sciences

Institute of Rock and Soil Mechanics, Cas

Stemirna (Shanghai) Biotechnology Co. Lted.

Zijin Mining Group Co., Ltd.

Huawei Technologies Co., Limited

Xin Chen

Jian Yu

Youye Zheng

Qiang Xue

Jiangshan Li

Xiaojia Jiang

Yuan Wx Li

Lei Liu

Jiaxian Liu

Yong Wan

Weimin Wu

Jiancuo Luosang

Dean G Tang

Jiangang Wei

Zhixiang Chen

Zhuoga Suolang

Xiaofang Dou

Mingli Wei

Jingjing Li

Defu Shu

Jianhui Wu

Changshun Jia

Shouhong Lin

Feng Gao

Shucun Wang

Daohu Lin

Yibin Lin

Xiaodan Lai

Nan Chao

Xu Kang

Jinzhang Zhang

Shunli Zheng

Rongzhu Guan

A display panel and a display apparatus are provided in the present disclosure. The display panel includes a substrate and an oxide transistor disposed on a side of the substrate, where the oxide transistor includes an active layer; the active layer includes a plurality of sub-film layers which are stacked with each other; and at least two of the plurality of sub-film layers have different indium ion concentrations.

Display panel and display apparatus

In a method for determining metallogenic potential of a porphyry by using trace elements and a B isotope of tourmaline, redox properties of magma is determined with Fe/(Fe+Fe) of tourmaline; then a water content and a content of metal Cu of the magma are determined with contents of HO and Cu in the tourmaline; and a source of the magma is determined with a B isotope of the tourmaline, the water content, oxygen fugacity and metal content and source of the magma are finally determined, and finally, whether the magma has metallogenic potential of a porphyry is comprehensively determined. The present disclosure determines a key control factor of porphyry copper with a mineral of the tourmaline, and overcomes the difficulties in low efficiency, a long period and high cost of a traditional method for determining metallogenic potential.

Method for determining metallogenic potential of porphyry by using trace elements and b isotope of tourmaline

A display panel includes a substrate, and an array layer disposed on one side of the substrate. The array layer includes a first-type thin film transistor and a second-type thin film transistor. The first active layer of the first-type thin film transistor and a second active layer of the second-type thin film transistor are both metal oxide active layers, and a sub-threshold swing value of the first-type thin film transistor is greater than a sub-threshold swing value of the second-type thin film transistor.

Display panel and electronic device

In a method for in-situ U-Pb dating of heterogeneous minerals, a target mineral is separated and purified by carrying out data analysis, extraction and enhancement on original mapping data. The method highlights distribution features of dating indexes (U content, Pb content, Pb/Uratio, Pb/Uratio and Th/U ratio) in a target mineral phase with a noise data processing technology, and more intuitively displays a favorable dating portion and a crystal growth change trend of the dating mineral. Further, a fine spot design is provided for high-precision dating analysis in a later stage. A plurality of geological events experienced by a heterogeneous mineral crystal in a growth process is accurately limited, so as to invert the mineral formation history which provides the basis for better study of mineralogy, mineral geochemistry and mineral geochronology. It is hence a novel indispensable auxiliary means of mineral geochronology and an auxiliary method for mineral exploration.

Method for in-situ U-Pb dating of heterogeneous minerals

A method for determining a direction and a distance of a metallogenic pluton of a skarn deposit with a garnet includes: collecting a sample; performing petrographic observation on the sample and designing an experimental area; computing a parameter; building a model; setting a parameter range; optimizing the parameters of the three models through a grid search method, and determining an optimal model and corresponding parameters a', b and c through repeated circulative iteration and by taking a minimum R as a limit condition; and substituting data of all sampling points into the optimal model, computing D of each sampling point, drawing a circle with a corresponding sampling point as a center and D as the radius, determining an intersection point of all circles as coordinates of the metallogenic pluton, and performing delineation with R as a buffer area of the metallogenic pluton.

Method for determining direction and distance of metallogenic pluton of skarn deposit with garnet

Disclosed are a barium slag-modified aluminate quick-hardening special cementing material and a preparation method thereof, wherein the raw materials for the preparation of the barium slag-modified aluminate quick-hardening special cementing material includes, in parts by weight: 10-12 parts of aluminate cement clinker, 2-3 parts of barium slag powder, 1.5-2 parts of sulfate material, and 0-1.5 parts of early-setting agent. The present invention, on the basis of ensuring the original advantages of aluminate cement, can increase the long-term strength, durability, and economy, and solve the possible environmental problems caused by the barium slag, making it more suitable for use in various engineering projects.

Barium slag-modified aluminate quick-hardening special cementing material and preparation method thereof

An in-situ vapor injection thermal desorption device includes a sectional combined input head, several intermediate connectors and a bottom protector connected in series from top to bottom. The in-situ vapor injection thermal desorption device further includes several water-vapor coupling injection activation chips, selectively disposed below any of the intermediate connectors; the sectional combined input head is provided with a high-pressure-gas inlet, several pairs of heat-transfer-oil inlets and heat-transfer-oil outlets, and several pairs of hot-water inlets and hot-water outlets; the water-vapor coupling injection activation chip is provided with several gas-liquid spraying holes. The disclosure is an assembling structure; the number of the water-vapor coupling injection activation chips can be increased or reduced according to remediation depth on an actual site; it can be repeatedly used, uniformly sprayed, and enables the vapor for treating the organic soil to be generated in situ and remediating organic pollution sites in a low-carbon, energy-saving way.

In-situ vapor injection thermal desorption device

The present invention is directed to a formulation for treating cancer comprising an androgen receptor signaling inhibitor and a B-cell-lymphoma-2 inhibitor, which may further comprising a Bromodomain-and-Extra-Terminal protein inhibitor or a phosphoinositide 3-kinase inhibitor.

Formulations and methods for the treatment of cancers

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Wuhan, China

Xin Chen