Chinese Academy of Sciences

Xilin Zhou

Min Zhu

Zhitang Song

Cheng Peng

Feng Rao

Liangcai Wu

Bo Tong Liu

Songlin Feng

Kun Ren

An Sb&#x2014;Te&#x2014;Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb&#x2014;Te&#x2014;Ti phase-change memory material is formed by doping an Sb&#x2014;Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb&#x2014;Te&#x2014;Ti phase-change memory material has a chemical formula SbTeTi, where 0&#x3c;x&#x3c;80 and 0&#x3c;y&#x3c;100&#x2212;x. When the Sb&#x2014;Te&#x2014;Ti phase-change memory material is a Ti&#x2014;SbTephase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb&#x2014;Te&#x2014;Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb&#x2014;Te&#x2014;Ti phase-change memory material has wide application in phase-change memories.

Sb&#x2014;Te&#x2014;Ti phase-change memory material and Ti&#x2014;Sb2Te3 phase-change memory material

The present invention discloses an Al&#x2014;Sb&#x2014;Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al(SbTe), where 0&#x3c;x&#x2266;0.85, 0.67&#x2266;y&#x2266;7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range. Compared with conventional GeSbTe, the materials achieved by properly adjusting the element ratio in Al(SbTe)have higher crystallization temperatures, better thermal stability and data retention, and lower melting temperatures, while at the same time inheriting the fast phase change capability from SbTe. Moreover, as a common element used in microelectronics, aluminum (Al) features mature technology and nice compatibility with CMOS.

Al-Sb-Te phase change material used for phase change memory and fabrication method thereof

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Shanghai, China

Xilin Zhou