Seagate Technology Incorporated

First Solar, Inc.

Xilin Peng

Yonghua Chen

Konstantin Nikolaev

Kaizhong Gao

Taras Grigorievich Pokhil

Victor Sapazhnikov

Rick C Powell

Jiaoming Qiu

Zhongyan Wang

Arnold Allenic

Gang Xiong

Dimitar Velikov Dimitrov

Song Sheng Xue

Benyamin Buller

Eric Walter Singleton

Dexin Wang

Olle Gunnar Heinonen

Shaun Eric McKinlay

Mark Ostrowski

Markus Gloeckler

Brian William Karr

Thomas Roy Boonstra

Zhibo Zhao

Zhigang Ban

Jigish Trivedi

Feng Liao

Lijuan Zou

Benjamin Milliron

Kenneth Ring

John Barden

Stacey Christine Wakeham

Alexey V Nazarov

Yifan Zhang

Juren Ding

Jianjun Wang

Oomman K Varghese

Vladyslav Alexandrovich Vasko

Younghua Chen

A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSTe) layer as are methods of forming such a photovoltaic device.

High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture

A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.

Protected transducer for dead layer reduction

A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Method and system of providing dopant concentration control in different layers of a semiconductor device

A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer. The intermediate layer includes the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The first component is different than the second component. Additionally, a read/write head including the hard magnet.

Hard magnet with cap and seed layers and data storage device read/write head incorporating the same

In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.

Magnetic read head with a read function feature

A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Magnetic tunnel junction having coherent tunneling structure

A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.

Magnetic device definition with uniform biasing control

In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

Magnetoresistive reader with demagnetization flux guide

A spin oscillator device generates a microwave output in response to an applied DC current. The device includes a spin momentum transfer (SMT) stack including a top electrode, a free layer, a nonmagnetic layer, a pinned magnetic structure, and a bottom electrode. A local magnetic field source adjacent the SMT stack applies a local magnetic field to the free layer to cause the magnetization direction of the free layer to be oriented at a tilt angle with respect to plane of the free layer. The local magnetic field source can include coils or an electromagnet structure, or permanent magnets in close proximity to the SMT stack.

Spin oscillator device

Growing community of inventors

Bloomington, MN, United States of America

Xilin Peng